Si7886ADP

N-Channel 30-V (D-S) MOSFET Si7886ADP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0040 at VGS = 10 V 30 0.0048 at VGS = 4.5 V ID (A) 25 23 Qg (Typ.) 47 PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: Si7886ADP-T1-E3 (Lead (Pb)-free) Si7886ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free available TrenchFET® Power MOSFET Optimized for “Low Side” Synchronous RoHS COMPLIANT Rectifier Operation New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested FEATURES DC/DC Converters Synchronous Rectifiers D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 25 20 15 12 Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction)a IDM 60 IS 4.5 1.6 Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS 50 125 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 5.4 3.4 1.9 1.2 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TJ, Tstg - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s Steady State RthJA 18 50 23 65 °C/W Maximum Junction-to-Case (Drain) Ste...