Si7674DP

N-Channel 30 V (D-S) MOSFET Si7674DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0033 at VGS = 10 V 0.0046 at VGS = 4.5 V PowerPAK SO-8 ID (A)a 40 40 Qg (Typ.) 37 nC FEATURES Halogen-free According to IEC 61249-2-21 Definition Extremely Low Qgd for Switching Losses 100 % Rg Tested 100 % Capacitance Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3G 4 Bottom View Ordering Information: Si7674DP-T1-E3 (Lead (Pb)-free) Si7674DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS Core DC/DC in Notebooks D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS IAS EAS PD TJ, Tstg Limit 30 ± 20 40 32 31b, c 25b, c 70 40 4.9b, c 40 80 83 53 5.4b, c 3.4b, c - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State RthJA RthJC 18 1.0 23...