Si6473DQ

P-Channel 20-V (D-S) MOSFET Si6473DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0125 at VGS = - 4.5 V - 20 0.016 at VGS = - 2.5 V 0.0215 at VGS = - 1.8 V ID (A) - 9.5 - 8.5 - 7.3 FEATURES Halogen-free TrenchFET® Power MOSFETs S* RoHS COMPLIANT TSSOP-8 D1 S2 S3 G4 Si6473DQ 8D 7S 6S 5D Top View Ordering Information: Si6473DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common. D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 9.5 - 5.9 - 6.2 - 4.9 Pulsed Drain Current (10 µs Pulse Width) IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.5 - 0.95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.75 1.08 1.14 0.69 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 55 95 35 Maximum 70 115 45 Unit °C/W Document Number: 71164 S-81056-Rev. C, 12-May-08 www.vishay.com 1 Si6473DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate Threshold Voltage Gate-Body Leakage Zero Gate V...