Si6413DQ

P-Channel 1.8-V (G-S) MOSFET Si6413DQ Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.010 at VGS = - 4.5 V - 20 0.013 at VGS = - 2.5 V 0.016 at VGS = - 1.8 V ID (A) - 8.8 - 7.6 - 6.8 FEATURES Halogen-free TrenchFET® Power MOSFET APPLICATIONS Load Switch PA Switch Charger Switch S* RoHS COMPLIANT TSSOP-8 D1 S2 S3 G4 Si6413DQ 8D 7S 6S 5D Top View Ordering Information: Si6413DQ-T1-GE3 (Lead (Pb)-free and Halogen-free) G * Source Pins 2, 3, 6 and 7 must be tied common. D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ±8 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID - 8.8 - 7.0 - 7.2 - 5.7 Pulsed Drain Current (10 µs Pulse Width) IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.35 - 0.95 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.5 1.05 1.0 0.67 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 60 100 35 Maximum 83 120 45 Unit °C/W Document Number: 72084 S-80682-Rev. B, 31-Mar-08 www.vishay.com 1 Si6413DQ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Gate ...