Si5853CDC
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)...
Si5853CDC
Vishay Siliconix
P-Channel 20 V (D-S) MOSFET with
Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)
0.104 at VGS = - 4.5 V
- 4a
- 20
0.144 at VGS = - 2.5 V
- 3.6
0.205 at VGS = - 1.8 V
-3
Qg (Typ.) 4.2 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V) 20
Vf (V) Diode Forward Voltage
0.46 at 0.5 A
IF (A) 1
1206-8 ChipFET
1
A KA
KS DG D
Marking Code
JF XX
Lot Traceability and Date Code
Part # Code
FEATURES Halogen-free According to IEC 61249-2-21
Definition LITTLE FOOT® Plus
Schottky Power MOSFET Compliant to RoHS Directive 2002/95/EC
APPLICATIONS Charging Switch for Portable Devices
- With Integrated Low Vf Trench
Schottky Diode
S G
K
Bottom View
DA
Ordering Information: Si5853CDC-T1-E3 (Lead (Pb)-free) Si5853CDC-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET) Reverse Voltage (
Schottky) Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (
Schottky) Pulsed Forward Current (
Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (
Schottky)
Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA ...