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Si5479DU Dataheets PDF



Part Number Si5479DU
Manufacturers Vishay
Logo Vishay
Description P-Channel MOSFET
Datasheet Si5479DU DatasheetSi5479DU Datasheet (PDF)

P-Channel 12-V (D-S) MOSFET Si5479DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.021 at VGS = - 4.5 V - 12 0.028 at VGS = - 2.5 V 0.039 at VGS = - 1.8 V ID (A)a - 16.9 - 16 - 16 Qg (Typ.) 21 nC PowerPAK ChipFET Single 1 2 D3 D 8D D D 4 7D G 6S 5 S Marking Code BB XXX Lot Traceability and Date Code Part # Code FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® • ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 .

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P-Channel 12-V (D-S) MOSFET Si5479DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.021 at VGS = - 4.5 V - 12 0.028 at VGS = - 2.5 V 0.039 at VGS = - 1.8 V ID (A)a - 16.9 - 16 - 16 Qg (Typ.) 21 nC PowerPAK ChipFET Single 1 2 D3 D 8D D D 4 7D G 6S 5 S Marking Code BB XXX Lot Traceability and Date Code Part # Code FEATURES • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® • ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable Applications S G Bottom View Ordering Information: Si5479DU-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VGS ID IDM IS PD TJ, Tstg Limit - 12 ±8 - 16a - 16a - 10.3b, c - 8.3b, c - 20 - 14.8 - 2.6b, c 17.8 11.4 3.1b, c 2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State RthJA RthJC 30 5.5 40 °C/W 7 Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 °C/W. Document Number: 73368 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 Si5479DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 6.9 A Drain-Source On-State Resistancea RDS(on) VGS = - 2.5 V, ID = - 6 A VGS = - 1.8 V, ID = - 2.6 A Forward Transconductancea gfs VDS = - 6 V, ID = - 6.9 A Dynamicb Input Capacitance Ciss Output Capacitance Coss VDS = - 6 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS = - 6 V, VGS = - 8 V, ID = - 6.9 A Gate-Source Charge Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 6.9 A Gate-Drain Charge Qgd Gate Resistance Rg f = 1 MHz Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = - 6 V, RL = 0.7 Ω ID ≅ - 8.3 A, VGEN = - 4.5 V, Rg = 1 Ω Fall Time tf Turn-On Delay Time td(on) Rise Time Turn-Off Delay Time tr td(off) VDD = - 6 V, RL = 0.7 Ω ID ≅ - 8.3 A, VGEN = - 8 V, Rg = 1 Ω Fall Time tf Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C Pulse Diode Forward Current ISM Body Diode Voltage VSD IS = - 8.6 A, VGS = 0 V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Qrr ta IF = - 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Min. - 12 - 0.4 - 20 Typ. Max. Unit - 10.3 2.6 0.017 0.023 0.032 24 - 1.0 ± 100 -1 - 10 0.021 0.028 0.039 V mV/°C V ns µA A Ω S 1810 640 490 34 21 3.1 6 9.1 12 35 76 115 6 13 77 100 51 32 20 55 115 175 12 20 115 150 - 0.9 55 28 19 36 - 14.9 - 20 - 1.2 90 45 pF nC Ω ns A V ns nC ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73368 S-81448-Rev. B, 23-Jun-08 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 VGS = 5 thru 2 V 16 10 8 Si5479DU Vishay Siliconix I D - Drain Current (A) I D - Drain Current (A) 12 1.5 V 8 4 1V 0 0.0 0.5 1.0 1.5 2.0 2.5.


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