Document
P-Channel 12-V (D-S) MOSFET
Si5479DU
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.021 at VGS = - 4.5 V - 12 0.028 at VGS = - 2.5 V
0.039 at VGS = - 1.8 V
ID (A)a - 16.9 - 16 - 16
Qg (Typ.) 21 nC
PowerPAK ChipFET Single
1
2
D3
D
8D
D D
4
7D
G
6S 5
S
Marking Code
BB XXX Lot Traceability and Date Code
Part # Code
FEATURES
• Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® • ChipFET® Package
- Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile
RoHS
COMPLIANT
APPLICATIONS • Load Switch, PA Switch, and Battery Switch for Portable
Applications
S
G
Bottom View Ordering Information: Si5479DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS
PD
TJ, Tstg
Limit
- 12
±8
- 16a - 16a - 10.3b, c - 8.3b, c - 20
- 14.8
- 2.6b, c 17.8
11.4
3.1b, c 2b, c - 55 to 150
260
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain)
t≤5s Steady State
RthJA RthJC
30 5.5
40 °C/W
7
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73368 S-81448-Rev. B, 23-Jun-08
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Si5479DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient VGS(th) Temperature Coefficient
ΔVDS/TJ ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 12 V, VGS = 0 V VDS = - 12 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≤ 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 6.9 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 2.5 V, ID = - 6 A
VGS = - 1.8 V, ID = - 2.6 A
Forward Transconductancea
gfs VDS = - 6 V, ID = - 6.9 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 6 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 6 V, VGS = - 8 V, ID = - 6.9 A
Gate-Source Charge
Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 6.9 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = - 6 V, RL = 0.7 Ω ID ≅ - 8.3 A, VGEN = - 4.5 V, Rg = 1 Ω
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time Turn-Off Delay Time
tr td(off)
VDD = - 6 V, RL = 0.7 Ω ID ≅ - 8.3 A, VGEN = - 8 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 8.6 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge Reverse Recovery Fall Time
Qrr ta
IF = - 8.6 A, dI/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Min. - 12 - 0.4
- 20
Typ.
Max.
Unit
- 10.3 2.6
0.017 0.023 0.032
24
- 1.0 ± 100
-1 - 10
0.021 0.028 0.039
V mV/°C
V ns µA A
Ω
S
1810 640 490 34 21 3.1
6 9.1 12 35 76 115 6 13 77 100
51 32
20 55 115 175 12 20 115 150
- 0.9 55 28 19 36
- 14.9 - 20 - 1.2 90 45
pF
nC Ω
ns
A V ns nC ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Document Number: 73368 S-81448-Rev. B, 23-Jun-08
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20 VGS = 5 thru 2 V
16
10 8
Si5479DU
Vishay Siliconix
I D - Drain Current (A)
I D - Drain Current (A)
12
1.5 V 8
4
1V 0 0.0 0.5 1.0 1.5 2.0 2.5.