Si4831BDY

Si4831BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a - 30 0.042 at VGS = - 10 V - 6.6 0.065 at VGS = - 4.5 V - 5.3 Qg (Typ.) 7.8 SCHOTTKY PRODUCT SUMMARY VKA (V) 30 VF (V) Diode Forward Voltage 0.53 V at 3 A ID (A)a 3.0 SO-8 A1 A2 S3 G4 8K 7K 6D 5D FEATURES Halogen-free According to IEC 61249-2-21 Available LITTLE FOOT® Plus Power MOSFET 100 % Rg Tested APPLICATIONS HDD Asynchronous Rectification SK G Top View Ordering Information: Si4831BDY-T1-E3 (Lead (Pb)-free) Si4831BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage (MOSFET) VDS Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) VKA VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) (MOSFET) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) TC = 25 °C TA = 25 °C IDM IS Average Forward Current (Schottky) Pulsed Forward Current (Schottky) IF IFM Maximum Power Dissipation (MOSFET and Schottky) TC = 25 °C TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 30 - 30 ± 20 - 6.6 - 5.2 - 5.1b, c - 3.9b, c - 30 - 2.7 - 1.6b, c - 3b - 20 3.3 2.1 2.0b, c 1.2b, c - 55 to 150 A Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET and Schottky)...