Si4831BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)...
Si4831BDY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET with
Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
ID (A)a
- 30
0.042 at VGS = - 10 V
- 6.6
0.065 at VGS = - 4.5 V
- 5.3
Qg (Typ.) 7.8
SCHOTTKY PRODUCT SUMMARY
VKA (V) 30
VF (V) Diode Forward Voltage
0.53 V at 3 A
ID (A)a 3.0
SO-8
A1 A2 S3 G4
8K 7K 6D 5D
FEATURES Halogen-free According to IEC 61249-2-21
Available LITTLE FOOT® Plus Power MOSFET 100 % Rg Tested
APPLICATIONS HDD Asynchronous Rectification
SK
G
Top View
Ordering Information: Si4831BDY-T1-E3 (Lead (Pb)-free) Si4831BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET)
VDS
Reverse Voltage (
Schottky) Gate-Source Voltage (MOSFET)
VKA VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C) (MOSFET)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)
TC = 25 °C TA = 25 °C
IDM IS
Average Forward Current (
Schottky) Pulsed Forward Current (
Schottky)
IF IFM
Maximum Power Dissipation (MOSFET and
Schottky)
TC = 25 °C TC = 70 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TA = 70 °C
TJ, Tstg
Limit - 30
- 30
± 20
- 6.6
- 5.2
- 5.1b, c - 3.9b, c
- 30
- 2.7
- 1.6b, c - 3b - 20
3.3
2.1
2.0b, c 1.2b, c - 55 to 150
A Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient (MOSFET and
Schottky)...