Si3456CDV

N-Channel 30-V (D-S) MOSFET Si3456CDV Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.034 at VGS = 10 V 30 0.052 at VGS = 4.5 V ID (A)d 7.8 6.3 Qg (Typ.) 4 nC TSOP-6 Top View FEATURES Halogen free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC APPLICATIONS Load Switch HDD D1 6D 3 mm D G 25 34 2.85 mm D S Marking Code AP XXX Lot Traceability and Date Code Part # Code Ordering Information: Si3456CDV-T1-E3 (Lead (Pb)-free) Si3456CDV-T1-GE3 (Lead (Pb)-free and Halogen-free) D (1, 2, 5, 6) G (3) (4) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ, Tstg Soldering Recommendations (Peak Temperature) Limit 30 ± 20 7.7 6.2 6.1a, b 4.9a, b 20 2.9 1.7a, b 3.3 2.1 2a, b 1.3a, b - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot (Drain) t≤5s Steady State Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 110 °C/W. d. Based on TC = 25 °C. Symbol RthJA RthJF Typical...