2N5551

2N5550 2N5551 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5550 and 2N5551 are silicon NPN transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL 2N5550 2N5551 Collector-Base Voltage VCBO 160 180 Collector-Emitter Voltage VCEO 140 160 Emitter-Base Voltage Continuous Collector Current VEBO 6.0 IC 600 Power Dissipation PD 625 Power Dissipation (TC=25°C) PD 1.0 Operating and Storage Junction Temperature Thermal Resistance TJ, Tstg ΘJA -65 to +150 200 Thermal Resistance ΘJC 125 UNITS V V V mA mW W °C °C/W °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5550 2N5551 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX ICBO VCB=100V - - 100 - - - ICBO ICBO VCB=120V VCB=100V, TA=100°C - - - - - 50 - - 100 - - - ICBO VCB=120V, TA=100°C - - - - - 50 IEBO VEB=4.0V - - 50 - - 50 BVCBO BVCEO IC=100μA IC=1.0mA 160 - - 180 - 140 - - 160 - - BVEBO IE=10μA 6.0 - - 6.0 - - VCE(SAT) IC=10mA, IB=1.0mA - - 0.15 - - 0.15 VCE(SAT) VBE(SAT) IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA - - 0.25 - - 0.20 - - 1.0 - - 1.0 VBE(SAT) IC=50mA, IB=5.0mA - - 1.2 - - 1.0 hFE VCE=5.0V, IC=1.0mA 60 - - 80 - - hFE VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=50mA 60 - 250 80 - 250 20 - - 30 - - hfe VCE=10V, IC=1.0mA, f=1.0kHz 50 - 200 ...