SS8050

Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300mW(TC=25℃) APPLICATIONS z High Collector Current. Production specification SS8050 ORDERING INFORMATION Type No. Marking SS8050 Y1 SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Ratings VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 40 25 6 1.5 300 -55 to +150 Units V V V A mW ℃ C086 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial Planar Transistor SS8050 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current Collector cut-off current Emitter cut-off current ICBO ICEO IEBO VCB=35V,IE=0 VCE=20V,IB=0 VEB=6V,IC=0 0.1 μA 0.1 μA 0.1 μA DC current gain VCE=1V,IC=100mA 120 400 hFE VCE=1V,IC=800mA 40 110 Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Base-emitter voltage VBE Output capacitance Cob Transition frequency fT IC=800 mA, IB= 80mA IC=800 mA, IB= 80mA VCE=1V IC=10mA VCB=10...