Si7804DN

Si7804DN Vishay Siliconix N-Channel 30-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.0185 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A) 10 8 PowerPAK 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View Ordering Information: Si7804DN-T1-E3 (Lead (Pb)-free) Si7804DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile 100 % Rg Tested APPLICATIONS DC/DC Conversion D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 10 6.5 7.5 5.0 Pulsed Drain Current Continuous Source Current (Diode Conduction)a IDM 40 IS 2.9 1.2 Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS 15 11 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.5 1.9 1.5 0.8 Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c TJ, Tstg - 55 to 150 260 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 10 s Steady State RthJA 28 65 35 81 °C/W Maximum Junction-to-Case (Drain) Steady State RthJC 4.5 6.0 Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile ...