MMS9012

Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMS9012 Features SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150OC Marking Code: J3Y PNP Silicon Plastic-Encapsulate Transistor Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter OFF CHARACTERISTICS Min Max Units V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB=0) V(BR)EBO Emitter-Base Breakdown Voltage (IE=100uAdc, IC=0) ICBO Collector Cutoff Current (VCB=40Vdc, IE=0) ICEO Collector Cutoff Current (VCE=20Vdc, IB=0) IEBO Emitter Cutoff Current (VEB=5.0Vdc, IC=0) ON CHARACTERISTICS 40 --- Vdc 25 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc hFE(1) DC Current Gain (IC=50mAdc, VCE=1.0Vdc) hFE(2) DCCurrent Gain (IC=500mAdc, VCE=1.0Vdc) VCE(sat) Collector-Emitter Saturation Voltage (IC=500mAdc, IB=50mAdc) VBE(sat) Base-Emitter Saturation Voltage (IC=500mAdc, IB=50mAdc) VEB Base- Emitter Voltage (IE=100mAdc) SMALL-SIGNAL CHARACTERISTICS 120 350 --40 --- ----- 0.6 Vdc --- 1.2 Vdc --- 1.4 Vdc fT Transistor Frequency 150 --- MHz (IC=20mAdc, VCE=6.0Vdc, f=30MHz) CLASSIFICATION OF HFE (1) Rank Range L 120-200 H 200-350 SOT-23 A D CB FE G HJ K DIMENSIONS INCHES DIM MIN M...