2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications....
2N3055, MJ2955
Complementary Power
Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
Power dissipation - PD = 115W at TC = 25°C. DC current gain hFE = 20 to 70 at IC = 4.0A. VCE(sat) = 1.1V (Maximum) at IC = 4.0A, IB = 400mA.
Pin 1. Base 2. Emitter Collector(Case)
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C 7.96 9.28
D
11.18
12.19
E
25.20
26.67
F 0.92 1.09
G 1.38 1.62
H
29.90
30.40
I
16.64
17.30
J 3.88 4.36
K
10.67
11.18
Dimensions : Millimetres
NPN 2N3055
PNP MJ2955
15 Ampere Complementary Silicon
Power
Transistors 60 Volts 115 Watts
TO-3
Maximum Ratings
Characteristic
Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Symbol
VCEO VCER VCBO VEBO
IC IB
PD
TJ, TSTG
Rating
60 70 100
7.0
15 7.0 115 0.657 -65 to +200
Unit
V
A W W/°C °C
Page 1
31/05/05 V1.0
2N3055, MJ2955
Complementary Power
Transistors
Thermal Characteristics
Characteristic
Symbol
Thermal Resistance Junction to Case
Rθjc
Figure - 1 Power Derating
Maximum 1.52
Unit °C/W
PD, Power Dissipation (Watts)
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (1) (IC = 200mA, IB = 0)
Collector-Emitter Sus...
