2N3055

2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Continuous Base Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEO VEBO IC IB PD TJ, Tstg JC 100 70 60 7.0 15 7.0 115 -65 to +200 1.52 ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICEV VCE=100V, VEB=1.5V ICEV VCE=100V, VEB=1.5V, TC=150°C ICEO VCE=30V IEBO VEB=7.0V BVCEO IC=200mA 60 BVCER IC=200mA, RBE=100Ω 70 VCE(SAT) IC=4.0A, IB=400mA VCE(SAT) IC=10A, IB=3.3A VBE(ON) VCE=4.0V, IC=4.0A hFE VCE=4.0V, IC=4.0A 20 hFE VCE=4.0V, IC=10A 5.0 hfe VCE=4.0V, IC=1.0A, f=1.0kHz 15 fT VCE=10V, IC=0.5A, f=1.0MHz 2.5 fhfe VCE=4.0V, IC=1.0A, f=1.0kHz 10 Is/b VCE=40V, t=1.0s 2.87 MAX 1.0 5.0 0.7 5.0 1.1 3.0 1.5 70 120 UNITS V V V V A A W °C °C/W UNITS mA mA mA mA V V V V V MHz kHz A R1 (26-July 2013) 2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS TO-3 CASE - MECHANICAL OUTLINE R2 LEAD CODE: 1) Base 2)...