Document
Si5857DU
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V) - 20
RDS(on) (Ω) 0.058 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V
ID (A)a 6 6
Qg (Typ.) 5.5 nC
SCHOTTKY PRODUCT SUMMARY
VKA (V) 20
VF (V) Diode Forward Voltage
0.375 at 1 A
IF (A)a 2
PowerPAK® ChipFET® Dual
1 A
2
Marking Code
JA XXX Lot Traceability
and Date Code
K
A3
Part # Code
8K
S4
3.07mm 6 D
D
G
5 1.8 mm
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • LITTLE FOOT® Plus Power MOSFET • New Thermally Enhanced PowerPAK®
ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Charging Switch for Portable Devices
- With Integrated Low VF Trench Schottky Diode
SK
G
Bottom View Ordering Information: Si5857DU-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
A
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET)
Continuous Drain Current (TJ = 150 °C) (MOSFET)
Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky)
Maximum Power Dissipation (MOSFET)
Maximum Power Dissipation (Schottky)
Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature)d, e
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VKA VGS
ID
IDM IS IF IFM
PD
PD
TJ, Tstg
Limit
- 20
20
± 12 6a 6a - 5b, c - 4b, c - 20 - 6a 1.9b, c 2
7
10.4
6.7 2.3b, c 1.5b, c
7.8
5 2.1b, c 1.3b, c - 55 to 150
260
Unit V
A
W W °C
Document Number: 73696 S09-2111-Rev. D, 12-Oct-09
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Si5857DU
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)b, f
t≤5s
RthJA
43
55
Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, g
t≤5s
RthJC RthJA
9.5 49
12 °C/W
61
Maximum Junction-to-Case (Drain) (Schottky)
RthJC
13
16
Notes: a. Package limited. b. Surface Mounted on FR4 board. c. t ≤ 5 s. d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions for MOSFETS is 105 °C/W. g. Maximum under Steady State conditions for Schottky is 110 °C/W.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
VDS Temperature Coefficient VGS(th) Temperature Coefficient
ΔVDS/TJ ΔVGS(th)/TJ
ID = - 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 °C
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 4.5 V
Drain-Source On-State Resistancea
RDS(on)
VGS = - 4.5 V, ID = - 3.6 A VGS = - 2.5 V, ID = - 1 A
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 3.6 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg VDS = - 10 V, VGS = - 10 V, ID = - 5 A
Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time
Qgs Qgd Rg td(on)
tr td(off)
tf td(on)
tr td(off)
tf
VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A f = 1 MHz
VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω
VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω
Min. Typ. Max. Unit
- 20 - 0.6 - 20
- 19 2.6
0.048 0.081
10
V
mV/°C
- 1.5 ± 100
-1 - 10
0.058 0.100
V ns µA A Ω S
480 125 pF 90 11 17 5.5 8.5
nC 1.2 1.8 9Ω 11 20 42 65 33 50 50 75
ns 5 10 15 25 25 40 10 20
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Document Number: 73696 S09-2111-Rev. D, 12-Oct-09
Si5857DU
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD IS = - 4 A, VGS = 0 V
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge Reverse Recovery Fall Time
Qrr ta
IF = - 4 A dI/dt = 100 A/µs TJ = 25 °C
Reverse Recovery Rise Time
tb.