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Si5857DU Dataheets PDF



Part Number Si5857DU
Manufacturers Vishay
Logo Vishay
Description P-Channel 20-V (D-S) MOSFET
Datasheet Si5857DU DatasheetSi5857DU Datasheet (PDF)

Si5857DU Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.058 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A)a 6 6 Qg (Typ.) 5.5 nC SCHOTTKY PRODUCT SUMMARY VKA (V) 20 VF (V) Diode Forward Voltage 0.375 at 1 A IF (A)a 2 PowerPAK® ChipFET® Dual 1 A 2 Marking Code JA XXX Lot Traceability and Date Code K A3 Part # Code 8K S4 3.07mm 6 D D G 5 1.8 mm FEATURES • Halogen-free According to IEC 61249-2-21 Definition .

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Si5857DU Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode MOSFET PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) 0.058 at VGS = - 4.5 V 0.100 at VGS = - 2.5 V ID (A)a 6 6 Qg (Typ.) 5.5 nC SCHOTTKY PRODUCT SUMMARY VKA (V) 20 VF (V) Diode Forward Voltage 0.375 at 1 A IF (A)a 2 PowerPAK® ChipFET® Dual 1 A 2 Marking Code JA XXX Lot Traceability and Date Code K A3 Part # Code 8K S4 3.07mm 6 D D G 5 1.8 mm FEATURES • Halogen-free According to IEC 61249-2-21 Definition • LITTLE FOOT® Plus Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Charging Switch for Portable Devices - With Integrated Low VF Trench Schottky Diode SK G Bottom View Ordering Information: Si5857DU-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET A ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150 °C) (MOSFET) Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) Operating Junction and Storage Temperature Range Soldering Recommendation (Peak Temperature)d, e TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VDS VKA VGS ID IDM IS IF IFM PD PD TJ, Tstg Limit - 20 20 ± 12 6a 6a - 5b, c - 4b, c - 20 - 6a 1.9b, c 2 7 10.4 6.7 2.3b, c 1.5b, c 7.8 5 2.1b, c 1.3b, c - 55 to 150 260 Unit V A W W °C Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 www.vishay.com 1 Si5857DU Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)b, f t≤5s RthJA 43 55 Maximum Junction-to-Case (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, g t≤5s RthJC RthJA 9.5 49 12 °C/W 61 Maximum Junction-to-Case (Drain) (Schottky) RthJC 13 16 Notes: a. Package limited. b. Surface Mounted on FR4 board. c. t ≤ 5 s. d. See Solder Profile (www.vishay.com/doc?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions for MOSFETS is 105 °C/W. g. Maximum under Steady State conditions for Schottky is 110 °C/W. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 °C On-State Drain Currenta ID(on) VDS ≤ - 5 V, VGS = - 4.5 V Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 3.6 A VGS = - 2.5 V, ID = - 1 A Forward Transconductancea gfs VDS = - 10 V, ID = - 3.6 A Dynamicb Input Capacitance Ciss Output Capacitance Coss VDS = - 10 V, VGS = 0 V, f = 1 MHz Reverse Transfer Capacitance Crss Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 5 A Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A f = 1 MHz VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 4.5 V, Rg = 1 Ω VDD = - 10 V, RL = 2.5 Ω ID ≅ - 4 A, VGEN = - 10 V, Rg = 1 Ω Min. Typ. Max. Unit - 20 - 0.6 - 20 - 19 2.6 0.048 0.081 10 V mV/°C - 1.5 ± 100 -1 - 10 0.058 0.100 V ns µA A Ω S 480 125 pF 90 11 17 5.5 8.5 nC 1.2 1.8 9Ω 11 20 42 65 33 50 50 75 ns 5 10 15 25 25 40 10 20 www.vishay.com 2 Document Number: 73696 S09-2111-Rev. D, 12-Oct-09 Si5857DU Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C Pulse Diode Forward Current ISM Body Diode Voltage VSD IS = - 4 A, VGS = 0 V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Qrr ta IF = - 4 A dI/dt = 100 A/µs TJ = 25 °C Reverse Recovery Rise Time tb.


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