Si4170DY

New Product N-Channel 30-V (D-S) MOSFET Si4170DY Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.0035 at VGS = 10 V 0.0045 at VGS = 4.5 V ID (A)a 30 27 Qg (Typ.) 29 nC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View Ordering Information: Si4170DY-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES Halogen-free TrenchFET® Power MOSFET 100 % Rg Tested 100 % Avalanche Tested APPLICATIONS Notebook PC Core - Low Side Switch D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C IDM IS IAS EAS Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 30 22.8 21.8b, c 17.3b, c 70 5.4 2.7b, c 40 80 6 3.3 3.0b, c 1.9b, c - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t ≤ 10 s Steady State Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 85 °C/W. Symbol RthJA RthJF Typical 33 16 Maximum 42 21 RoHS COMPLIANT Unit V A mJ W °C Unit °C/W Document Number: 68396 S-81054-Rev. A, 12-May-...