Document
SUM47N10-24L
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
100 0.024 at VGS = 10 V 0.027 at VGS = 4.5 V
ID (A) 47 44
FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested
RoHS
COMPLIANT
TO-263
G DS Top View Ordering Information: SUM47N10-24L-E3 (Lead (Pb)-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Single Pulse Avalanche Current
IAS
Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %)
L = 0.1 mH
EAS
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating.
PCB Mount Free Air
Symbol RthJA RthJC
Document Number: 72827 S-80272-Rev. C, 11-Feb-08
Limit 100 ± 20 47 27 70 47 40 80 136b 3.75a - 55 to 175
Unit V
A
mJ W °C
Maximum 40 62.5 1.1
Unit °C/W
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SUM47N10-24L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb Dynamica
V(BR)DSS VGS(th)
IGSS IDSS ID(on)
rDS(on)
gfs
VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 °C VDS = 100 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A, TJ = 125 °C VGS = 10 V, ID = 40 A, TJ = 175 °C
VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 40 A
Input Capacitance
Ciss
Output Capacitance
Coss
VGS = 0 V, VDS = 25 V, F = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs VDS = 50 V, VGS = 10 V, ID = 40 A
Gate-Drain Chargec
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Timec
td(on)
Rise Timec Turn-Off Delay Timec
tr td(off)
VDD = 50 V, RL = 1.25 Ω ID ≅ 47 A, VGEN = 10 V, Rg = 2.5 Ω
Fall Timec
tf
Source-Drain Diode Ratings and Characteristics TC = 25 °C
Pulsed Current
ISM
Diode Forward Voltageb
VSD IF = 40 A, VGS = 0 V
Source-Drain Reverse Recovery Time
trr
IF = 47 A, di/dt = 100 A/µs
Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature.
Min. 100 1.0 70
1
Typ.a
Max.
3.0 ± 100
1 50 250
0.019
0.021 70
0.024 0.048 0.060 0.027
2400 290 120 40 11
9 2.2 8 40 15 80
60
3.5 13 60 25 120
70 1.0 1.5 75 120
Unit V nA µA A Ω S
pF
nC Ω ns
A V ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause p.