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SUM47N10-24L Dataheets PDF



Part Number SUM47N10-24L
Manufacturers Vishay
Logo Vishay
Description N-channel MOSFET
Datasheet SUM47N10-24L DatasheetSUM47N10-24L Datasheet (PDF)

SUM47N10-24L Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 100 0.024 at VGS = 10 V 0.027 at VGS = 4.5 V ID (A) 47 44 FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested RoHS COMPLIANT TO-263 G DS Top View Ordering Information: SUM47N10-24L-E3 (Lead (Pb)-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltag.

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SUM47N10-24L Vishay Siliconix N-Channel 100-V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 100 0.024 at VGS = 10 V 0.027 at VGS = 4.5 V ID (A) 47 44 FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • 100 % Rg Tested RoHS COMPLIANT TO-263 G DS Top View Ordering Information: SUM47N10-24L-E3 (Lead (Pb)-free) D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Single Pulse Avalanche Current IAS Single Pulse Avalanche Energy (Duty Cycle ≤ 1 %) L = 0.1 mH EAS Maximum Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Surface Mounted on 1" x 1" FR4 Board. b. See SOA curve for voltage derating. PCB Mount Free Air Symbol RthJA RthJC Document Number: 72827 S-80272-Rev. C, 11-Feb-08 Limit 100 ± 20 47 27 70 47 40 80 136b 3.75a - 55 to 175 Unit V A mJ W °C Maximum 40 62.5 1.1 Unit °C/W www.vishay.com 1 SUM47N10-24L Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb Dynamica V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 °C VDS = 100 V, VGS = 0 V, TJ = 175 °C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 40 A VGS = 10 V, ID = 40 A, TJ = 125 °C VGS = 10 V, ID = 40 A, TJ = 175 °C VGS = 4.5 V, ID = 20 A VDS = 15 V, ID = 40 A Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 25 V, F = 1 MHz Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs VDS = 50 V, VGS = 10 V, ID = 40 A Gate-Drain Chargec Qgd Gate Resistance Rg f = 1 MHz Turn-On Delay Timec td(on) Rise Timec Turn-Off Delay Timec tr td(off) VDD = 50 V, RL = 1.25 Ω ID ≅ 47 A, VGEN = 10 V, Rg = 2.5 Ω Fall Timec tf Source-Drain Diode Ratings and Characteristics TC = 25 °C Pulsed Current ISM Diode Forward Voltageb VSD IF = 40 A, VGS = 0 V Source-Drain Reverse Recovery Time trr IF = 47 A, di/dt = 100 A/µs Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. c. Independent of operating temperature. Min. 100 1.0 70 1 Typ.a Max. 3.0 ± 100 1 50 250 0.019 0.021 70 0.024 0.048 0.060 0.027 2400 290 120 40 11 9 2.2 8 40 15 80 60 3.5 13 60 25 120 70 1.0 1.5 75 120 Unit V nA µA A Ω S pF nC Ω ns A V ns Stresses beyond those listed under “Absolute Maximum Ratings” may cause p.


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