Si5480DU

N-Channel 30-V (D-S) MOSFET Si5480DU Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 0.016 at VGS = 10 V 0.022 at VGS = 4.5 V PowerPAK ChipFET Single ID (A)a 12 12 Qg (Typ.) 11 nC FEATURES Halogen-free TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT 1 2 D3 DD 4 8D 7D 6S D G S 5 APPLICATIONS Load Switch, PA Switch, and Battery Switch for Portable Applications DC-DC Synchronous Rectification Marking Code AD XXX Lot Traceability and Date Code G D Part # Code Bottom View S Ordering Information: Si5480DU-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage VDS VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 70 °C TA = 25 °C TA = 70 °C ID IDM Continuous Source-Drain Diode Current Maximum Power Dissipation TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C IS PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TA = 70 °C TJ, Tstg Limit 30 ± 20 12a 12a 10.7b, c 8.6b, c 30 12a 2.6b, c 31 20 3.1b, c 2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State RthJA RthJC 34 3 40 °C/W ...