P-Channel MOSFET
P-Channel 60-V (D-S) MOSFET
Si3459DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60 0.220 at VGS = - 10 ...
Description
P-Channel 60-V (D-S) MOSFET
Si3459DV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60 0.220 at VGS = - 10 V 0.310 at VGS = - 4.5 V
ID (A) ± 2.2 ± 1.9
FEATURES
Halogen-free According to IEC 61249-2-21 Definition
TrenchFET® Power MOSFET Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6 Top View
16
25
34
(4) S (3) G
2.85 mm
Ordering Information: Si3459DV-T1-E3 (Lead (Pb)-free) Si3459DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
(1, 2, 5, 6) D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 °C)a, b Pulsed Drain Current
TC = 25 °C TC = 70 °C
ID IDM
Single Avalanche Current (L = 0.1 mH)
IAS
Maximum Power Dissipationb Operating Junction and Storage Temperature Range
TA = 25 °C TA = 70 °C
PD TJ, Tstg
Limit - 60 ± 20 ± 2.2 ± 1.7 ± 10 -7
2 1.3 - 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Lead
t≤5s Steady State Steady State
Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s.
Symbol RthJA RthJL
Typical
106 35
Maximum 62.5
Unit V
A
W °C
Unit °C/W
Document Number: 70877 S09-0765-Rev. D, 04-May-09
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Si3459DV
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta...
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