JCS650F

R JCS650 MAIN CHARACTERISTICS ID VDSS Rdson（@Vgs=10V） Qg 28.0A 200 V 0.085Ω 103nC Package N N- CHANNEL MOSFET z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 81pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 81pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes JCS650C-O-C-N-B JCS650F-O-S-N- B JCS650S-O-S-N- A JCS650S-O-S-N-B Marking JCS650C JCS650F JCS650S JCS650S Package Halogen Free Packaging TO-220C TO-220MF TO-263 TO-263 NO NO NO NO Tube Tube Reel Tube Device Weight 2.15 g(typ) 2.20 g(typ) 1.37 g(typ) 1.37 g(typ) ：201408C 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS650 Value JCS650C Parameter － Drain-Source Voltage Symbol VDSS JCS650S JCS650F 200 Drain Current -continuous ID T=25℃ T=100℃ 28.0 17.7 28.0* 17.7* （ 1） Drain Current -pulse （note 1） IDM 112 112* Gate-Source Voltage VGSS ±30 （ 2） Single Pulsed Avalanche Energy（note 2） EAS 575 （ 1） Avalanche Current （note 1） IAR 28 （ 1） Repetitive Avalanche Current （note 1） EAR 15.8 （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt 5.5 Power Dissipation PD TC=25℃ -Derate above 25℃ 158 1.265 50 0.40 Operating and Storage Temperature Range TJ，TSTG -55～+150 Maximum Lead Temperature for Soldering TL Purposes 300 * *Drain current limited by maximum junction temperature Unit V A A A V m...