P0903BTG

P0903BTG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 25V 9.5mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 25 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current 1 TC = 25 °C TC = 100 °C ID IDM 64 40 150 Avalanche Current IAS 35 Avalanche Energy L = 0.1mH EAS 64 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5 25 Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case 1Pulse width limited by maximum junction temperature. 2Package limitation current is 58A. SYMBOL RqJC TYPICAL MAXIMUM UNIT 2 °CS/ W Ver 1.0 1 2012/4/16 P0903BTG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250mA VDS = VGS, ID = 250mA VDS = 0V, VGS = ±20V 25 1.0 1.8 3.0 ±100 Zero Gate Voltage Drain Current On-State Drain Current1 IDSS ID(ON) VDS = 20V, VGS = 0V VDS = 20V, VGS = 0V , TC = 125 °C VDS = 5V, VGS = 10V 150 1 10 Drain-Source On-State Resistance1 Forward Transconductance1 RDS(ON) gfs VGS = 5V, ID = 20A VGS = 10V, ID = 20A VDS = 5V, ID = 20A 9.3 19 7.3 9.5 53 DYNAMIC Input Capacitance C...