FDP51N25
FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET
FDP51N25 / FDPF51N25
N-Channel UniFETTM MOSFET
250 V, 51 A, 60 mΩ
Feat...
Description
FDP51N25 / FDPF51N25 — N-Channel UniFETTM MOSFET
FDP51N25 / FDPF51N25
N-Channel UniFETTM MOSFET
250 V, 51 A, 60 mΩ
Features
RDS(on) = 48 mΩ (Typ.) @ VGS = 10 V, ID = 25.5 A Low Gate Charge (Typ. 55 nC) Low Crss (Typ. 63 pF)
Applications
PDP TV Lighting Uninterruptible Power Supply AC-DC Power Supply
August 2014
Description
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
DD
GDS
TO-220 GDS
G S
TO-220F
G
TO-220F Y-formed
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
S
Symbol
Parameter
FDP51N25
G
TO-220F LG-formed
S
FDPF51N25 FDPF51N25YDTU FDPF51N25RDTU
Unit
VDSS ID
IDM VGSS EAS IAR EAR dv/dt
Drain-Source Voltage Drain Current
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
(Note 2) (Note 1) (Note 1) (Note 3)
250 51 51* 30 30*
204 204* ± 30 1111 51 32 4.5
V A A A
V mJ A mJ V/ns
PD
TJ, TSTG TL
Power Dissipation
(TC = 25°C) - Derate Above 25°C
Operating and Storage Temperature Range
Maximu...
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