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MBRF1090CT

Vishay

Dual High Voltage Trench MOS Barrier Schottky Rectifier

www.vishay.com MBRF1090CT, MBRF10100CT Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rect...


Vishay

MBRF1090CT

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Description
www.vishay.com MBRF1090CT, MBRF10100CT Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier TMBS® ITO-220AB PIN 1 PIN 3 123 PIN 2 FEATURES Trench MOS Schottky technology Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation Solder dip 275 °C max. 10 s, per JESD 22-B106 Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters or polarity protection application. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 2 x 5.0 A 90 V, 100 V 120 A 0.75 V 150 °C ITO-220AB Diode variations Common cathode MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs max. MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Max. repetitive peak reverse voltage Working peak reverse voltage Max. DC blocking voltage Max. average forward rectified current at TC = 105 °C total device per diode VRRM VRWM VDC IF(AV) Peak forward surge current 8.3 ms single half sine-wave  superimposed on rated load per diode IFSM Non-repetitive a...




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