ME4626

ME4626/ME4626-G N-Channel 30-V(D-S) MOSFET Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) GENERAL DESCRIPTION The ME4626 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package. PIN CONFIGURATION (SOP-8) Top View FEATURES ● RDS(ON)≦3.5mΩ@VGS=10V ● RDS(ON)≦4.5mΩ@VGS=4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Battery Powered System ● DC/DC Converter ● Load Switch e Ordering Information: ME4626 (Pb-free) ME4626-G (Green product-Halogen free) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current( TJ =150℃)* TA=25℃ TA=70℃ Pulsed Drain Current Maximum Power Dissipation* TA=25℃ TA=70℃ Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Lead* Symbol VDSS VGSS ID IDM PD TJ RθJA RθJL * The device mounted on 1in2 FR4 board with 2 oz copper Aug, 2009-Ver2.0 Limit 30 ±20 21 16.9 84 2.5 1.6 -55 to 150 50 24 Unit V V A A W ℃ ℃/W 01 N-Ch...