SiR426DP

N-Channel 40-V (D-S) MOSFET SiR426DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0105 at VGS = 10 V 40 0.0125 at VGS = 4.5 V ID (A) 30a 30a Qg (Typ.) 9.3 nC PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR426DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES TrenchFET® Power MOSFET 100 % Rg and UIS Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Converters - Synchronous Buck - Synchronous Rectifier D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VGS ID ± 20 30a 30a 15.9b, c 12.8b, c Pulsed Drain Current IDM 70 Avalanche Current Avalanche Energy Continuous Source-Drain Diode Current L = 0.1 mH TC = 25 °C TA = 25 °C IAS EAS IS 20 20 30a 4b, c TC = 25 °C 41.7 Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C PD 26.7 4.8b, c 3.1b, c Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg - 55 to 150 260 Unit V A mJ A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t  10 s Steady State Symbol RthJA RthJC Typical 21 2.4 Maximum 26 3 Unit °C/W Notes: a. Based on TC = 25 °C. Package limited...