SSF1502D

Main Product Characteristics VDSS 150V RDS(on) 0.15Ω(typ) ID 8A Features and Benefits DPAK  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSF1502D 150V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Operating Junction and Storage Temperature Range Max. 8 5 32 33 0.18 150 ± 20 -55 to + 175 Units A W W/°C V V °C www.goodark.com Page 1 of 7 Rev.1.0 SSF1502D 150V N-Channel MOSFET Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-Ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④ Typ. — — — Max. 4.5 70 53 Units ℃/W ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise spe...