N-Channel MOSFET
Freescale
N-Channel 20-V (D-S) MOSFET
Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switc...
Description
Freescale
N-Channel 20-V (D-S) MOSFET
Key Features: Low rDS(on) trench technology Low thermal impedance Fast switching speed
Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
FDS6898A/ MC6898A
VDS (V) 20
PRODUCT SUMMARY rDS(on) (mΩ)
30 @ VGS = 4.5V 40 @ VGS = 2.5V
ID(A) 6.9 6.0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±12
Continuous Drain Current a
Pulsed Drain Current b Continuous Source Current (Diode Conduction) a
TA=25°C TA=70°C
ID
IDM IS
6.9 5.4 30 2.8
Power Dissipation a
TA=25°C TA=70°C
PD
2.1 1.3
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units V
A
A W °C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS Parameter
t <= 10 sec Steady State
Symbol Maximum
RθJA
62.5 110
Units °C/W
Notes a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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Freescale
FDS6898A/ MC6898A
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Static
Gate-Source Threshold Voltage VGS(th)
VDS = VGS, ID = 250 uA
1
V
Gate-Body Leakage
IGSS VDS = 0 V, VGS = ±12 V
±100 nA
Zero Gate Voltage Drain Current
IDSS
VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 55°C
1 uA 25
On-State Drain Current a
ID(on)
VDS = 5 V, VGS = 4.5 V
10
A
Drain-Source On-Resistance a
rDS(on)
VG...
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