SavantIC Semiconductor
Silicon PNP Power Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220C package ·High speed ...
SavantIC Semiconductor
Silicon
PNP Power
Transistors
www.DataSheet4U.com
DESCRIPTION ·With TO-220C package ·High speed switching ·Low collector saturation voltage
APPLICATIONS ·For low voltage switching applications
PINNING PIN 1 2 3
DESCRIPTION
Emitter Collector;connected to mounting base Base
Product Specification
2SB871 2SB871A
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SB871 2SB871A
Open emitter
VCEO
Collector-emitter voltage
2SB871 2SB871A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current
ICM Collector current-Peak
PC Collector power dissipation Tj Junction temperature
TC=25
Tstg Storage temperature
VALUE -40 -50 -20 -40 -5 -10 -20 40 150
-50~150
UNIT V
V V A A W
SavantIC Semiconductor
Silicon
PNP Power
Transistors
www.DataSheet4U.com
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
2SB871 2SB871A
IC=-10mA; IB=0
VCEsat Collector-emitter saturation voltage IC=-10A; IB=-0.33A
VBEsat
Base-emitter saturation voltage
IC=-10A; IB=-0.33A
ICBO
Collector cut-off current
2SB871 VCB=-40V; IE=0 2SB871A VCB=-50V; IE=0
IEBO Emitter cut-off current
VEB=-5V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-2V
hFE-2
DC current gain
IC=-3A ; VCE=-2V
COB Output capacitance
IE=0 ; VCB=-10V; f=1MHz
fT Transition frequency
IC=-0.5A ; VCE=-10V
Switching times
...