50N03

KIA SEMICONDUCTORS 50 Amps, 30 Volts N-CHANNEL MOSFET 1.Features  Advanced trench process technology  High density cell design for ultra low on-resistance  Fully characterized avalanche voltage and current 2.Applications  VDSS=30V,RDS(on)=6.5mΩ,ID=50A  Vds=30V  RDS(ON)=6.5mΩ(Max.),VGS@10V,Ids@30A  RDS(ON)=9.5mΩ(Max.),[email protected],Ids@30A 3. Pin configuration 50N03 Pin Function 1 Gate 2 Drain 3 Source 4 Drain 1 of 3 Rev 1.0 JAN 2014 KIA SEMICONDUCTORS N-CHANNEL ENHANCEMENT-MODE MOSFET 50N03 4. Maximum ratings and thermal characteristics Rating Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current1) Maximum power dissipation TA=25°C TA=75°C Operating junction and storage temperature range Junction-to-case thermal resistance Junction-to ambient themal rasistance (PCB mount)2) (Ta=25°C,unless otherwise notes) Symbol Value Unit VDS 30 V VGS +20 V ID 50 A IDM 200 A PD 60 W PD TJ/TSTG 23 -55 to 150 W °C RθJC 1.8 °C/W RθJA 50 °C/W Note:1.Repetitive rating:pulse width limited by the maximum junction temperation 2.1-in2 2oz Cu PCB board 3.Guaranteed by design;not subject to production testing 5. Ordering information Part number KIA50N03 Package TO-251,TO-252,TO-220 6. Typical application circuit 2 of 3 Rev 1.0 JAN 2014 KIA SEMICONDUCTORS N-CHANNEL ENHANCEMENT-MODE MOSFET 50N03 7. Electrical characteristics Parameter Static Drain-source breakdown voltage Drain-source on-state rasistancem Gate threshold ...