2SK2885(L), 2SK2885(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS(on) = 10mΩ typ.
4V gate drive devices. High speed switching
Outline
LDPAK
D
G
S
ADE-208-545 A 2nd. Edition
44
1 2 3
1 2 3
1. Gate 2. Drain 3. Source 4. Drain
2SK2885(L), 2SK2885(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source ...
