B745

Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A s Features q Low noise voltage NV. q High foward current transfer ratio hFE. q M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SB745 base voltage 2SB745A Collector to 2SB745 emitter voltage 2SB745A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –35 –55 –35 –55 –5 –200 –50 400 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C 6.9±0.1 1.5 1.5 R0.9 R0.9 Unit: mm 2.5±0.1 1.0 1.0 4.5±0.1 4.1±0.2 1.25±0.05 2.4±0.2 2.0±0.2 3.5±0.1 1.0±0.1 0.4 R0.7 0.85 0.55±0.1 321 0.45±0.05 2.5 2.5 1:Base 2:Collector 3:Emitter EIAJ:SC–71 M Type Mold Package s Electrical Characteristics (Ta=25˚C) Parameter Symbol Conditions min typ max Unit Collector cutoff current Collector to base voltage 2SB745 2SB745A ICBO ICEO VCBO VCB = –10V, IE = 0 VCE = –10V, IB = 0 IC = –10µA, IE = 0 –100 nA –1 µA –35 V –55 Collector to emitter 2SB745 voltage 2SB745A VCEO IC = –2mA, IB = 0 –35 –55 V Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency VEBO hFE* VCE(sat) VBE fT Noise voltage NV IE = –10µ...