SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
• Periodic avalanche rated
PG-TO220FP PG-TO262
• Extreme dv/dt rated
• High peak current capability • Improved transconductance
23 1 P-TO220-3-31
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V 0.38 Ω 11 A
PG-TO220
Type
Package
Ordering Code Marking
SPP11N60C3
PG-TO220 Q67040-S4395 11N60C3
SPI11N60C3
PG-TO262 Q67042-S4403 11N60C3
SPA11N60C3 PG-TO220FP Q67040-S4408 SPA11N60C3E8185 PG-TO220
11N60C3 11N60C3
Maximum Ratings
Parameter
Symbol
Value
SPP_I
SPA
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=11A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static
Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7)
ID
ID puls EAS
EAR
IAR VGS VGS Ptot Tj , Tstg dv/dt
11
111)
7
71)
33
33
340
340
0.6
0.6
11
11
±20
±20
±30
±30
125
33
-55...+150
15
Unit A
A mJ
A V W °C V/ns
Rev. 3.3
Page 1
2018-02-09
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Maximum Ratings Parameter Drain Source voltage slope
VDS = 480 V, ID = 11 A, Tj = 125 °C
Thermal Characteristics Parameter
Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4)
Symbol dv/dt
Value 50
Unit V/ns
Symbol
RthJC RthJC_FP RthJA RthJA_FP RthJA
Tsold
Values
Unit
min. typ. max.
-
-
1 K/W
-
-
3.8
-
-
62
-
-
80
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600
-
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11A
- 700
breakdown voltage
-V -
Gate threshold voltage Zero gate voltage drain current
VGS(th) IDSS
ID=500µA, VGS=VDS 2.1
VDS=600V, VGS=0V,
Tj=25°C
-
Tj=150°C
-
3 3.9 µA
0.1 1 - 100
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
VGS=30V, VDS=0V VGS=10V, ID=7A Tj=25°C Tj=150°C
-
- 100 nA
Ω - 0.34 0.38 - 0.92 -
Gate input resistance
RG
f=1MHz, open drain
-
0.86
-
Rev. 3.3
Page 2
2018-02-09
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Electrical Characteristics Parameter
Symbol
Conditions
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,5) Co(er)
energy related
Effective output capacitance,6) Co(tr) time related
Turn-on delay time Rise time Turn-off delay time Fall time
td(on) tr td(off) tf
VDS≥2*ID*RDS(on)max, ID=7A VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V to 480V
VDD=380V, VGS=0/10V, ID=11A, RG=6.8Ω
Values
Unit
min. typ. max.
-
8.3
-S
- 1200 - pF
- 390 -
-
30
-
-
45
-
-
85
-
-
10
- ns
-
5
-
-
44 70
-
5
9
Gate Charge Characteristics
Gate to source charge Gate to drain charge
Qgs Qgd
VDD=480V, ID=11A
Gate charge total
Qg
VDD=480V, ID=11A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=11A
-
5.5
- nC
-
22
-
-
45 60
-
5.5
-V
1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220°C, reflow 5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 6Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. 7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak