MBR3030PT thru MBR3045PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
AC A
C(TAB)
A C A
A=Anode, ...
MBR3030PT thru MBR3045PT
Wide Temperature Range and High Tjm
Schottky Barrier Rectifiers
AC A
C(TAB)
A C A
A=Anode, C=Cathode, TAB=Cathode
MBR3030PT MBR3035PT MBR3040PT MBR3045PT
VRRM V 30 35 40 45
VRMS V 21
24.5 28 31.5
VDC V 30 35 40 45
Dimensions TO-247AD
Dim. Millimeter Min. Max.
A 19.81 20.32 B 20.80 21.46
C 15.75 16.26 D 3.55 3.65
E 4.32 5.49 F 5.4 6.2
G 1.65 2.13 H - 4.5
J 1.0 1.4 K 10.8 11.0
L 4.7 5.3 M 0.4 0.8
N 1.5 2.49
Inches Min. Max.
0.780 0.800 0.819 0.845
0.610 0.640 0.140 0.144
0.170 0.216 0.212 0.244
0.065 0.084 - 0.177
0.040 0.055 0.426 0.433
0.185 0.209 0.016 0.031
0.087 0.102
Symbol
Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR)
VF
Maximum Forward Voltage (Note 1)
IF=20A IF=20A IF=30A IF=30A
@TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC
Maximum Ratings 30
200
10000
0.60 0.76 0.72
IR
Maximum DC Reverse Current At Rated DC Blocking Voltage
@TJ=25oC @TJ=125oC
ROJC CJ TJ TSTG
Typical Thermal Resistance (Note 2) Typical Junction Capacitance Per Element (Note 3) Operating Temperature Range Storage Temperature Range
NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
1 60
1.4 500 -55 to +150 -55 to +175
FEATURES
* Metal of silicon rectifier, majority carrier conducton * Guard ring fo...