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BC817-25 Dataheets PDF



Part Number BC817-25
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description SMALL SIGNAL NPN TRANSISTORS
Datasheet BC817-25 DatasheetBC817-25 Datasheet (PDF)

BC817-25 ® BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type BC817-25 BC817-40 Marking 6B 6C s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKING s THE PNP COMPLEMENTARY TYPES ARE t(s)BC807-25 AND BC817-40 RESPECTIVELY cAPPLICATIONS us WELL SUITABLE FOR PORTABLE rodEQUIPMENT s SMALL LOAD SWITCH TRANSISTORS PWITH HIGH GAIN AND LOW SATURATION leteVOLTAGE SOT-23 INTERNAL SCHEMATIC DIAGRAM Product(s) .

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BC817-25 ® BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type BC817-25 BC817-40 Marking 6B 6C s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKING s THE PNP COMPLEMENTARY TYPES ARE t(s)BC807-25 AND BC817-40 RESPECTIVELY cAPPLICATIONS us WELL SUITABLE FOR PORTABLE rodEQUIPMENT s SMALL LOAD SWITCH TRANSISTORS PWITH HIGH GAIN AND LOW SATURATION leteVOLTAGE SOT-23 INTERNAL SCHEMATIC DIAGRAM Product(s) - ObsoABSOLUTE MAXIMUM RATINGS leteSymbol Parameter oVCBO Collector-Base Voltage (IE = 0) bsVCEO Collector-Emitter Voltage (IB = 0) O VEBO Emitter-Base Voltage (IC = 0) Value 50 45 5 Unit V V V IC Collector Current 0.5 A ICM Collector Peak Current Ptot Total Dissipation at TC = 25 oC Tstg Storage Temperature Tj Max. Operating Junction Temperature 1 250 -65 to 150 150 A mW oC oC September 2002 1/4 BC817-25 / BC817-40 THERMAL DATA Rthj-amb • Thermal Resistance Junction-Ambient • Device mounted on a PCB area of 1 cm2 Max 500 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150oC 100 nA 5 µA IEBO Emitter Cut-off Current VEB = 5 V (IE = 0) 100 nA V(BR)CEO∗ Collector-Emitter Breakdown Voltage IC = 10 mA 45 V (IB = 0) VCE(sat)∗ Collector-Emitter IC = 500 mA IB = 50 mA 0.7 V Saturation Voltage VBE(on)∗ Base-Emitter On )Voltage IC = 500 mA VCE = 1 V 1.2 V t(shFE∗ DC Current Gain IC = 100 mA VCE = 1 V cfor BC817-25 160 400 ufor BC817-40 250 600 dfT Transition Frequency IC = 10 mA VCE = 5 V f =100 MHz 100 MHz ProCCBO Collector-Base Capacitance IE = 0 VCB = 10 V Obsolete Product(s) - Obsolete∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 % f = 1 MHz 8 pF 2/4 BC817-25 / BC817-40 SOT-23 MECHANICAL DATA DIM. MIN. mm TYP. MAX. MIN. mils TYP. MAX. A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 )G 2.1 t(sH 0.38 ucL 0.3 rodM 0 PN 0.3 Obsolete Product(s) - ObsoleteO 0.09 2.05 2.5 0.48 0.6 0.1 0.65 0.17 74.8 82.6 14.9 11.8 0 11.8 3.5 80.7 98.4 18.8 23.6 3.9 25.6 6.7 0044616/B 3/4 BC817-25 / BC817-40 bsolete Product(s) - Obsolete Product(s)Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences Oof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems with.


BC817-40 BC817-25 BC817-40


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