BC817-16/-25/-40
Taiwan Semiconductor
300mW, NPN Small Signal Transistor
FEATURES
● Low power loss, high efficiency ● I...
BC817-16/-25/-40
Taiwan Semiconductor
300mW,
NPN Small Signal
Transistor
FEATURES
● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter
MECHANICAL DATA
● Case: SOT-23 ● Molding compound meets UL 94 V-0 flammability rating ● Moisture sensitivity level: level 1, per J-STD-020 ● Packing code with suffix "G" means green compound
(halogen-free) ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 1A whisker test ● Weight: 8mg (approximately)
KEY PARAMETERS
PARAMETER VALUE UNIT
VCBO VCEO VEBO
IC hFE Package
50
V
45
V
5
V
500
mA
250-600
SOT-23
Configuration
Single Dice
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
BC817- BC817- BC817-
SYMBOL
UNIT
16
25
40
Marking code on the device
6A
6B
6C
Power dissipation Collector-base voltage, emitter open
IC = 10 μA, IE = 0
PD VCBO
300
mW
50
V
Collector-emitter voltage, base open IC = 10 mA, IB = 0
VCEO
45
V
Emitter-base voltage, collector open IE = 1 μA, IC = 0
VEBO
5
V
Collector current, dc
IC
500
mA
Junction temperature
TJ
-55 to +150
°C
Storage temperature
TSTG
-55 to +150
°C
1
Version:J1702
BC817-16/-25/-40
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA...