Document
SEMICONDUCTOR
MBR40100CT Series RRooHHSS
Nell Semiconductors
Dual Common Cathode High-Voltage Schottky Rectifier, 40A (20A x 2), 100V
Available
RoHS*
COMPLIANT
FEATURES
175°C TJ operation High frequency operation
Low forward voltage drop
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47
Solder bath temperature 275°C maximum, 10 s per JESD 22B-106
DESCRIPTION
The MBR40100CT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature.
APPLICATIONS
Switching mode power supplies
DC to DC converters Freewheeling diodes Reverse battery protection.
MECHANICAL DATA
Case: TO-220AB Molding compound meets UL 94 V-O flammability rating
Terminals: Mat tin plated leads, solderable per J-STD-002 and JESD 22-B102
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
123
TO-220AB (MBR40100CT)
123
TO-220F (MBRF40100CT)
CPAINS2E
PIN 1 PIN 3
PRODUCT SUMMARY
lF(AV)
20A x 2
VR 100V
VF at lF=20A
0.67V
lRM max.
11 mA at 125°C
TJ max.
175°C
Diode variation
Dual dice, common cathode
EAS 7.5 mJ
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL lF(AV)
CHARACTERISTICS Rectangular waveform
VRRM
lFSM
tp = 8.3ms, single half sine-wave
VF 20 Apk, TJ = 125°C
TJ Range
VALUE 20 x 2 100 275 0.67 -55 to 175
UNIT A V A V °C
VOLTAGE RATINGS
SYMBOL
PARAMETER
VR Maximum DC reverse voltage
VRWM
Maximum working peak reverse voltage
VDC Maximum DC blocking voltage
VALUE 100
UNIT V
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SEMICONDUCTOR
MBR40100CT Series RRooHHSS
Nell Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average forward current
per device per diode
lF(AV)
TC = 135°C, rated VR, 50% duty cycle ,rectangular waveform
Non-repetitive peak surge current
lFSM
Surge applied at rated load condition half wave single phase 60 Hz
VALUE UNIT 40 A 20
275 A
Non-repetitive avalanche energy, per diode
Repetitive avalanche current
EAS TJ = 25°C, L = 60mH, IAS = 0.5A
7.5
lAR
Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical
0.5
mJ A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum forward voltage drop
V
(1) FM
IF = 20A IF = 40A IF = 20A IF = 40A
TJ = 25°C TJ = 125°C
Maximum instantaneous reverse current
l
(2) RM
TJ = 25°C TJ = 125°C
Rated DC voltage
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25°C
Maximum voltage rate of change
dV/dt Rated VR
Note (1) Pulse test : 300 µs pulse width, 1% duty cycle
(2) Pulse test : Pulse width ≤ 40 ms
VALUE UNIT 0.82
0.98 0.67
V
0.80
0.1 mA
11
1480 pF
10000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
Maximum storage temperature range
Tstg
Maximum thermal resistance, junction to case
RthJC DC operation
per diode per device
Typical thermal resistance, case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque
minimum maximum
VALUE -55 to 175 -55 to 175
2.0 1.0
0.5
2 0.07 6 (5) 12 (10)
UNIT °C
°C/W
g oz. kgf . cm (lbf . in)
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Page 2 of 5
SEMICONDUCTOR
MBR40100CT Series RRooHHSS
Nell Semiconductors
Ordering Information Table
Device code
MBR F 40 100 CT
1 2345
1 - Schottky MBR series 2 - Package outline
"none" for TO-220AB "F" for ITO-220AB (TO-220F) 3 - Current rating (40 = 40A, 20A x 2) 4 - Voltage ratings, 100=100V 5 - Circuit configuration, Center tap common cathode,
TO-220 series package
lnstantaneous forward current, IF (A)
Fig.1 Maximum forward voltage drop characteristics (Per Diode)
1000
100 10
TJ=175° TJ=125° TJ=25°
1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward voltage drop, VFM(V)
Reverse current, lR (mA)
Fig.2 Typical values of reverse current vs. reverse voltage (Per Diode)
1000 100 10 1 0.1 0.01
0.001 0
TJ=175° TJ=150° TJ=125° TJ=100° TJ=75° TJ=50° TJ=25°
20 40 60 80 Reverse voltage, VR (V)
100
Junction capacitance, CT (pF)
Fig.3 Typical junction capacitance vs. reverse voltage (Per Diode)
10000
1000
TJ=25°
100 0
20 40 60 80 Reverse voltage, VR (V)
100
Allowable case temperature (°C)
Fig.4 Maximum allowable case temperature vs. average forward current (Per Diode)
180
170 DC
160
150 140 130 120
Square wave (D = 0.50) 80% Rated VR applied
110
See note (1)
100 0
5 10 15 20 25 Average forward current, lF(AV) (A)
30
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SEMICONDUCTOR 10
MBR40100CT Series RRooHHSS
Nell Semiconductors
Fig.5 Maximum thermal impedance Rth(j-c) characteristics (Per Diode)
Thermal lmpedance, Rth(j-c) (°C/W)
1
0.1
0.01 0.00001
Single pulse (thermal resistance)
0.0001
0.001
D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20
0..