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MBR40100CT Dataheets PDF



Part Number MBR40100CT
Manufacturers Nell Semiconductors
Logo Nell Semiconductors
Description Dual Common Cathode High-Voltage Schottky Rectifier
Datasheet MBR40100CT DatasheetMBR40100CT Datasheet (PDF)

SEMICONDUCTOR MBR40100CT Series RRooHHSS Nell Semiconductors Dual Common Cathode High-Voltage Schottky Rectifier, 40A (20A x 2), 100V Available RoHS* COMPLIANT FEATURES 175°C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47.

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SEMICONDUCTOR MBR40100CT Series RRooHHSS Nell Semiconductors Dual Common Cathode High-Voltage Schottky Rectifier, 40A (20A x 2), 100V Available RoHS* COMPLIANT FEATURES 175°C TJ operation High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness, long term reliability and overvoltage protection Compliant to RoHS Designed and qualified according to JEDEC-JESD47 Solder bath temperature 275°C maximum, 10 s per JESD 22B-106 DESCRIPTION The MBR40100CT Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175°C junction temperature. APPLICATIONS Switching mode power supplies DC to DC converters Freewheeling diodes Reverse battery protection. MECHANICAL DATA Case: TO-220AB Molding compound meets UL 94 V-O flammability rating Terminals: Mat tin plated leads, solderable per J-STD-002 and JESD 22-B102 Polarity: As marked Mounting Torque: 10 in-lbs maximum 123 TO-220AB (MBR40100CT) 123 TO-220F (MBRF40100CT) CPAINS2E PIN 1 PIN 3 PRODUCT SUMMARY lF(AV) 20A x 2 VR 100V VF at lF=20A 0.67V lRM max. 11 mA at 125°C TJ max. 175°C Diode variation Dual dice, common cathode EAS 7.5 mJ MAJOR RATINGS AND CHARACTERISTICS SYMBOL lF(AV) CHARACTERISTICS Rectangular waveform VRRM lFSM tp = 8.3ms, single half sine-wave VF 20 Apk, TJ = 125°C TJ Range VALUE 20 x 2 100 275 0.67 -55 to 175 UNIT A V A V °C VOLTAGE RATINGS SYMBOL PARAMETER VR Maximum DC reverse voltage VRWM Maximum working peak reverse voltage VDC Maximum DC blocking voltage VALUE 100 UNIT V www.nellsemi.com Page 1 of 5 SEMICONDUCTOR MBR40100CT Series RRooHHSS Nell Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS Maximum average forward current per device per diode lF(AV) TC = 135°C, rated VR, 50% duty cycle ,rectangular waveform Non-repetitive peak surge current lFSM Surge applied at rated load condition half wave single phase 60 Hz VALUE UNIT 40 A 20 275 A Non-repetitive avalanche energy, per diode Repetitive avalanche current EAS TJ = 25°C, L = 60mH, IAS = 0.5A 7.5 lAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 mJ A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum forward voltage drop V (1) FM IF = 20A IF = 40A IF = 20A IF = 40A TJ = 25°C TJ = 125°C Maximum instantaneous reverse current l (2) RM TJ = 25°C TJ = 125°C Rated DC voltage Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25°C Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse test : 300 µs pulse width, 1% duty cycle (2) Pulse test : Pulse width ≤ 40 ms VALUE UNIT 0.82 0.98 0.67 V 0.80 0.1 mA 11 1480 pF 10000 V/µs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ Maximum storage temperature range Tstg Maximum thermal resistance, junction to case RthJC DC operation per diode per device Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque minimum maximum VALUE -55 to 175 -55 to 175 2.0 1.0 0.5 2 0.07 6 (5) 12 (10) UNIT °C °C/W g oz. kgf . cm (lbf . in) www.nellsemi.com Page 2 of 5 SEMICONDUCTOR MBR40100CT Series RRooHHSS Nell Semiconductors Ordering Information Table Device code MBR F 40 100 CT 1 2345 1 - Schottky MBR series 2 - Package outline "none" for TO-220AB "F" for ITO-220AB (TO-220F) 3 - Current rating (40 = 40A, 20A x 2) 4 - Voltage ratings, 100=100V 5 - Circuit configuration, Center tap common cathode, TO-220 series package lnstantaneous forward current, IF (A) Fig.1 Maximum forward voltage drop characteristics (Per Diode) 1000 100 10 TJ=175° TJ=125° TJ=25° 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Forward voltage drop, VFM(V) Reverse current, lR (mA) Fig.2 Typical values of reverse current vs. reverse voltage (Per Diode) 1000 100 10 1 0.1 0.01 0.001 0 TJ=175° TJ=150° TJ=125° TJ=100° TJ=75° TJ=50° TJ=25° 20 40 60 80 Reverse voltage, VR (V) 100 Junction capacitance, CT (pF) Fig.3 Typical junction capacitance vs. reverse voltage (Per Diode) 10000 1000 TJ=25° 100 0 20 40 60 80 Reverse voltage, VR (V) 100 Allowable case temperature (°C) Fig.4 Maximum allowable case temperature vs. average forward current (Per Diode) 180 170 DC 160 150 140 130 120 Square wave (D = 0.50) 80% Rated VR applied 110 See note (1) 100 0 5 10 15 20 25 Average forward current, lF(AV) (A) 30 www.nellsemi.com Page 3 of 5 SEMICONDUCTOR 10 MBR40100CT Series RRooHHSS Nell Semiconductors Fig.5 Maximum thermal impedance Rth(j-c) characteristics (Per Diode) Thermal lmpedance, Rth(j-c) (°C/W) 1 0.1 0.01 0.00001 Single pulse (thermal resistance) 0.0001 0.001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0..


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