BAV70T

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BAV70T High-speed double diode Product specification File under Discrete Semiconductors, SC01 1997 Dec 19 Philips Semiconductors High-speed double diode Product specification BAV70T FEATURES Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75 V Repetitive peak reverse voltage: max. 85 V Repetitive peak forward current: max. 500 mA. APPLICATIONS High-speed switching in e.g. surface mounted circuits. DESCRIPTION Two high-speed switching diodes in a common cathode configuration, fabricated in planar technology, in a very small rectangular SMD SOT416 (SC-75) package. PINNING PIN 1 2 3 DESCRIPTION anode 1 anode 2 common cathode handbook, halfpage 3 3 1 1 2 MAM368 2 Marking code: A4. Fig.1 Simplified outline (SOT416; SC-75) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS Per diode (unless otherwise specified) VRRM VR IF repetitive peak reverse voltage continuous reverse voltage continuous forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Ptot total power dissipation Tstg storage temperature Tj junction temperature Ts = 90 °C; see Fig.2 single diode loaded both diodes loaded square wave; Tj = 25 °C prior to surge; see Fig.4 t = 1 µs t = 1 ms t=1s Ts = 90 °C; one diode loaded MIN. MAX. UNIT − 85 V − 75 V − 150 mA − 75 mA − 5...