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BAV20W

UTC

SILICON EPITAXIAL PLANAR DIODE

UNISONIC TECHNOLOGIES CO., LTD BAV20W Preliminary DIODE SILICON EPITAXIAL PLANAR DIODE  DESCRIPTION The UTC BAV20W ...


UTC

BAV20W

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Description
UNISONIC TECHNOLOGIES CO., LTD BAV20W Preliminary DIODE SILICON EPITAXIAL PLANAR DIODE  DESCRIPTION The UTC BAV20W is a silicon epitaxial planar diode. The UTC BAV20W is suitable for general purpose application.  FEATURES * Planar diode * For general purpose application * Low leakage current 1 2 SOD-123 1 2 SOD-323  ORDERING INFORMATION Ordering Number BAV20WG-CA2-R BAV20WG-CB2-R Note: Pin Assignment: A: Anode K: Cathode Package SOD-123 SOD-323 Pin Assignment 12 KA KA Packing Tape Reel Tape Reel BAV20WG-CA2-R (1)Packing Type (1) R: Tape Reel (2)Package Type (3)Green Package (2) CA2: SOD-123, CB2: SOD-323 (3) G: Halogen Free and Lead Free  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R601-205.b BAV20W Preliminary DIODE  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage Continuous Reverse Voltage VRRM VR 200 150 V V Forward DC Current at TA=25°C (Note 2) Rectified Current (Average) Half Wave Rectification with Resist. Load at TA=25°C (Note 2) IF IO 250 mA 200 mA Repetitive Peak Forward Current at f>50Hz, TA=25°C (Note 2) IFRM 625 mA Surge Forward Current at t<1s, TJ=25°C IFSM 1.0 A Power Dissipation at TA=25°C (Note 2) Junction Temperature PD 410 mW TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratin...




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