Document
BAS70-04LT1G, SBAS70-04LT1G
Dual Series Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited.
Features
• Extremely Fast Switching Speed • Low Forward Voltage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 150°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Non−Repetitive Peak Forward Surge Current (t ≤ 1.0 s)
VR 70 V IFSM 100 mA
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Forward Power Dissipation @ TA = 25°C Derate above 25°C
PF 225 mW 1.8 mW/°C
Operating Junction and Storage Temperature Range
TJ, Tstg −55 to +150
°C
Thermal Resistance Junction−to−Ambient
RqJA
508 (Note 1)
311 (Note 2)
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad.
http://onsemi.com
70 VOLTS SCHOTTKY BARRIER DIODE
ANODE 1
CATHODE 2
3 CATHODE/ANODE
3
1 2
SOT−23 (TO−236AB) CASE 318
MARKING DIAGRAM
CG M G G
1
CG = Specific Device Code M = Date Code* G = Pb−Free Package
(Note: Microdot may be in either location) *Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BAS70−04LT1G
SOT−23 (Pb−Free)
3000 / Tape & Reel
SBAS70−04LT1G SOT−23 (Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
February, 2013 − Rev. 10
1
Publication Order Number: BAS70−04LT1/D
IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (μA)
BAS70−04LT1G, SBAS70−04LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage (IR = 10 μA) Total Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Leakage (VR = 50 V)
(VR = 70 V)
V(BR)R
70
−
V
CT − 2.0 pF
IR − 0.1 μA − 10
Forward Voltage (IF = 1.0 mA) Forward Voltage (IF = 10 mA) Forward Voltage (IF = 15 mA)
VF − 410 mV VF − 750 mV VF − 1.0 V
100
10
1.0 150°C
1 25°C 85°C
- 40°C
25°C 0.1
- 55°C
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage
100 TA = 150°C
10 125°C
1.0 85°C
0.1
0.01 25°C
0.001 0
5.0 10 15 20 25 30 35 40 45 VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Curr.