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BAS70-04LT1G Dataheets PDF



Part Number BAS70-04LT1G
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Dual Series Schottky Barrier Diode
Datasheet BAS70-04LT1G DatasheetBAS70-04LT1G Datasheet (PDF)

BAS70-04LT1G, SBAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix.

  BAS70-04LT1G   BAS70-04LT1G



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BAS70-04LT1G, SBAS70-04LT1G Dual Series Schottky Barrier Diode These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and portable applications where space is limited. Features • Extremely Fast Switching Speed • Low Forward Voltage • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable MAXIMUM RATINGS (TJ = 150°C unless otherwise noted) Rating Symbol Value Unit Reverse Voltage Non−Repetitive Peak Forward Surge Current (t ≤ 1.0 s) VR 70 V IFSM 100 mA THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Forward Power Dissipation @ TA = 25°C Derate above 25°C PF 225 mW 1.8 mW/°C Operating Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Thermal Resistance Junction−to−Ambient RqJA 508 (Note 1) 311 (Note 2) °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ minimum pad. 2. FR−4 @ 1.0 x 1.0 in pad. http://onsemi.com 70 VOLTS SCHOTTKY BARRIER DIODE ANODE 1 CATHODE 2 3 CATHODE/ANODE 3 1 2 SOT−23 (TO−236AB) CASE 318 MARKING DIAGRAM CG M G G 1 CG = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† BAS70−04LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel SBAS70−04LT1G SOT−23 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 February, 2013 − Rev. 10 1 Publication Order Number: BAS70−04LT1/D IF, FORWARD CURRENT (mA) IR, REVERSE CURRENT (μA) BAS70−04LT1G, SBAS70−04LT1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Reverse Breakdown Voltage (IR = 10 μA) Total Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Leakage (VR = 50 V) (VR = 70 V) V(BR)R 70 − V CT − 2.0 pF IR − 0.1 μA − 10 Forward Voltage (IF = 1.0 mA) Forward Voltage (IF = 10 mA) Forward Voltage (IF = 15 mA) VF − 410 mV VF − 750 mV VF − 1.0 V 100 10 1.0 150°C 1 25°C 85°C - 40°C 25°C 0.1 - 55°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage 100 TA = 150°C 10 125°C 1.0 85°C 0.1 0.01 25°C 0.001 0 5.0 10 15 20 25 30 35 40 45 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Reverse Curr.


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