BAS70

DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 M3D071 BAS70 series Schottky barrier (double) diodes Product specification Supersedes data of 1996 Oct 01 1999 Jun 01 Philips Semiconductors Schottky barrier (double) diodes Product specification BAS70 series FEATURES Low forward current High breakdown voltage Guard ring protected Small plastic SMD package Low diode capacitance. APPLICATIONS Ultra high-speed switching Voltage clamping Protection circuits. PINNING DESCRIPTION PIN SOT23 SOT143B BAS70 BAS70-04 BAS70-05 BAS70-06 BAS70-07 (see Fig.1b) (see Fig.1c) (see Fig.1d) (see Fig.1e) (see Fig.2) 1 a1 2 n.c. 3 k1 4− a1 k2 k1, a2 − a1 a2 k1, k2 − k1 k2 a1, a2 − k1 k2 a2 a1 DESCRIPTION Planar Schottky barrier diodes with an integrated guard ring for stress protection. Single diodes and double diodes with different pinning are available. The diodes BAS70, BAS70-04, BAS70-05 and BAS70-06 are encapsulated in a SOT23 small plastic SMD package. The BAS70-07 is encapsulated in a SOT143B small plastic SMD package. MARKING TYPE NUMBER BAS70 BAS70-04 BAS70-05 BAS70-06 BAS70-07 MARKING CODE(1) 73p∗ 74p∗ 75p∗ 76p∗ 77p Note 1. ∗ = -: Made in Hong Kong. ∗ = t: Made in Malaysia. handbook, 2 columns 3 1 Top view 2 MGC482 a. Simplified outline SOT23. handbook, 2 columns 3 12 n.c. MGC483 b. BAS70 single diode. handbook, 2 columns 3 12 MGC485 c. BAS70-04 handbook, 2 columns 3 12 MGC484 d. BAS70-05. handbook, 2 columns 3 12 MGC486 e. BAS70-06. Fig.1 ...