JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR20100FCT, 150FCT, 200FCT
SCHOT...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Diodes
MBR20100FCT, 150FCT, 200FCT
SCHOTTKY BARRIER RECTIFIER
TO-220F
FEATURES
z
Schottky Barrier Chip z Guard Ring Die Construction for Transient Protection z Low Power Loss,High Efficiency z High Surge Capability
1. ANODE 2. CATHODE 3. ANODE
z High Current Capability and Low Forward Voltage Drop z For Use in Low Voltage, High Frequency Inverters,Free Wheeling,
and Polarity Protection Applications MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
MBR20100FCT
Value MBR20150FCT
VRRM Peak repetitive reverse voltage
VRWM Working peak reverse voltage
100 150
VR DC blocking voltage
VR(RMS) RMS reverse voltage
70 105
BDTICIO Averagerectifiedoutputcurrent
20
MBR20200FCT 200 140
Unit
V V A
IFSM Non-Repetitive peak forward surge current 150 A 8.3ms half sine wave
PD Power dissipation
2W
RΘJA Thermal resistance from junction to ambient
50 ℃/W
Tj Junction temperature
125 ℃
Tstg Storage temperature
-55~+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Device
Test conditions Min Typ Max Unit
Reverse voltage
V(BR)
MBR20100FCT MBR20150FCT MBR20200FCT
IR=1mA
100 150 200
V
Reverse current
MBR20100FCT IR MBR20150FCT
MBR20200FCT MBR20100FCT
VR=100V VR=150V VR=200V
0.1 0.1 mA 0.1 1
Forward voltage
VF1 MBR20150FCT MBR20200FCT MBR20100FCT
IF=10A
1V 1 1.2
VF2* MBR20150FCT MBR20200FCT
IF=20A
1.2 V 1.2
*Pulst test www...