SD103BW

Production specification Schottky Barrier Diode SD103AW/SD103BW/SD103CW FEATURES z Low Forward Voltage Drop. z Guard Ring Construction For Transient Protection. z Negligible Reverse Recovery Time. z Low Reverse Capacitance. Pb Lead-free APPLICATIONS z Schotty barrier switching. SOD-123 ORDERING INFORMATION Type No. Marking SD103AW SD103BW SD103CW S4 S5 S6 Package Code SOD-123 SOD-123 SOD-123 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol SD103AW SD103BW SD103CW Unit Peak Repetitive Peak reverse voltage VRR Working Peak DC Reverse Voltage VRWM 40 30 20 V VR RMS Reverse Voltage VR(RMS) 28 21 14 V Forward Continuous Current IF 350 mA Repetitive Peak Forward Current @t≤1.0s Power Dissipation Thermal Resistance Junction to Ambient Storage temperature IFRM Pd RθjA Tstg 1.5 400 300 -65 to +125 A mW ℃/W ℃ A014 Rev.A www.gmicroelec.com 1 Production specification Schottky Barrier Diode SD103AW/SD103BW/SD103CW ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse Breakdown Voltage SD103AW SD103BW SD103CW Forward voltage Reverse current SD103AW SD103BW SD103CW Capacitance between terminals Reverse Recovery Time Symbol Min. V(BR)R 40 30 20 VF IRM CT trr Typ. 50 10 Max. Unit V 0.37 0.60 V 5.0 μA pF ns Conditions IR=10μA IR=10μA IR=10μA IF=20mA IF=200mA VR=30V VR=20V VR=10V VR=0,f=1MHz IR=IF=200mA Irr=0.1*IR,RL=100Ω TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified A01...