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SD103AW, SD103BW, SD103CW
Vishay Semiconductors
Small Signal Schottky Diodes
MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Cathode band color: black Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications
• Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems
• The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring
• For general purpose applications
• AEC-Q101 qualified
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
PARTS TABLE
PART SD103AW SD103BW SD103CW
ORDERING CODE
SD103AW-E3-08 or SD103AW-E3-18 SD103AW-HE3-08 or SD103AW-HE3-18 SD103BW-E3-08 or SD103BW-E3-18 SD103BW-HE3-08 or SD103BW-HE3-18 SD103CW-E3-08 or SD103CW-E3-18 SD103CW-HE3-08 or SD103CW-HE3-18
INTERNAL CONSTRUCTION
Single diode
Single diode
Single diode
TYPE MARKING S6
REMARKS
S7 Tape and reel
S8
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Forward continuous current (1) Power dissipation (infinite heat sink) (1) Single cycle surge
SD103AW SD103BW SD103CW
10 μs square wave
VRRM VRRM VRRM
IF Ptot IFSM
Note (1) Valid provided that electrodes are kept at ambient temperature
VALUE 40 30 20 350 400 2
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1) Junction temperature Operating temperature range Storage temperature range
RthJA Tj Top Tstg
Note (1) Valid provided that electrodes are kept at ambient temperature
VALUE 300 125
- 55 to + 125 - 55 to + 150
UNIT V V V mA
mW A
UNIT K/W °C °C °C
Rev. 1.6, 11-Mar-13
1 Document Number: 85681
For technical questions within your region:
[email protected],
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SD103AW, SD103BW, SD103CW
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Leakage current
Forward voltage drop Diode capacitance Reverse recovery time
VR = 30 V VR = 20 V VR = 10 V IF = 20 mA IF = 200 mA VR = 0 V, f = 1 MHz IF = IR = 50 mA to 200 mA, recover to 0.1 IR
SD103AW SD103BW SD103CW
IR IR IR VF VF CD
trr
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
TYP.