L-Band Medium & High Power GaAs FET
FEATURES
• High Output Power: P1dB=29.5dBm (Typ.) • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic...
Description
FEATURES
High Output Power: P1dB=29.5dBm (Typ.) High Gain: G1dB=14.5dB (Typ.) High PAE: ηadd=47% (Typ.) Hermetic Metal/Ceramic (SMT) Package
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FLU10XM
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU10XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series that uses a surface mount package that has been optimized for high volume cost driven applications.
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistence of 400Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.
15 -5 4.16 -65 to +175 +175
Unit
V V W °C °C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Conditions
Limits Min. Typ. Max.
Unit
Drain Current Transconductance
IDSS gm
VDS = 5V, VGS=0V VDS = 5V, IDS=200mA
- 300 450 - 150 -
mA mS
Pinch-Off Voltage
Vp
VDS = 5V, IDS=15mA
-1.0 -2.0 -3.5
V
Gate-Source Breakdown Voltage VGS...
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