FEATURES
High Output Power: P1dB=35.5dBm (Typ.) High Gain: G1dB=12.5dB (Typ.) High PAE: ηadd=46% (Typ.) Hermetic Metal/Ceramic (SMT) Package
Tape and Reel Available
FLU35XM
L-Band Medium & High Power GaAs FET
DESCRIPTION
The FLU35XM is a GaAs FET designed for base station applications in the PCN/PCS frequency range. This is a new product series t...
