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FLX107MH-12 Dataheets PDF



Part Number FLX107MH-12
Manufacturers Eudyna Devices
Logo Eudyna Devices
Description X / Ku Band Power GaAs FET
Datasheet FLX107MH-12 DatasheetFLX107MH-12 Datasheet (PDF)

FEATURES • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 7.5dB(Typ.) • High PAE: ηadd = 33%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package FLX107MH-12 X, Ku Band Power GaAs FET DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE.

  FLX107MH-12   FLX107MH-12


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FEATURES • High Output Power: P1dB = 30.0dBm(Typ.) • High Gain: G1dB = 7.5dB(Typ.) • High PAE: ηadd = 33%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package FLX107MH-12 X, Ku Band Power GaAs FET DESCRIPTION The FLX107MH-12 is a power GaAs FET that is designed for general purpose applications in the X-Band frequency range as it provides superior power, gain, and efficiency. Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Symbol Condition Drain-Source Voltage Gate-Source Voltage VDS VGS Total Power Dissipation PT Tc = 25°C Storage Temperature Tstg Channel Temperature Tch Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 8.8 and -0.5 mA respectively with gate resistance of 500Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. Rating 15 -5 7.5 -65 to +175 175 Unit V V W °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Symbol Test Conditions Min. Saturated Drain Current Transconductance IDSS gm VDS = 5V, VGS = 0V VDS = 5V, IDS = 250mA - Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency Vp VGSO P1dB G1dB ηadd VDS = 5V, IDS = 20mA IGS = -20µA VDS = 10V, IDS = 0.6 IDSS (Typ.), f = 12.5 GHz -1.0 -5 29.0 6.5 - Limit Typ. Max. 400 600 200 -2.0 -3.5 -- 30.0 - 7.5 - 33 - Unit mA mS V V dBm dB % Thermal Resistance CASE STYLE: MH Rth Channel to Case - 15 20 °C/W G.C.P.: Gain Compression Point Edition 1.1 August 1999 1 Total Power Dissipation (W) FLX107MH-12 X, Ku Band Power GaAs FET POWER DERATING CURVE 10 8 6 4 2 0 50 100 150 200 Case Temperature (°C) Drain Current (mA) DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 500 400 VGS =0V 300 -0.5V -1.0V 200 -1.5V 100 -2.0V 0 2 4 6 8 10 Drain-Source Voltage (V) Output Power (dBm) OUTPUT POWER vs. INPUT POWER f = 12.5GHz IDS ≈ 0.6 IDSS VDS=10V 30 VDS=8.5V Pout 28 26 24 ηadd 22 40 20 14 16 18 20 22 24 Input Power (dBm) ηadd (%) P1dB (dBm) P1dB & ηadd vs. VDS f = 12.5 GHz IDS ≈ 0.6 IDSS 31 30 P1dB 29 28 27 26 ηadd 40 30 20 10 8 9 10 Drain-Source Voltage (V) ηadd (%) 2 FLX107MH-12 X, Ku Band Power GaAs +j50 +j25 14GHz 8 13 12 +j10 11 10 14GHz 0 9 10 25 8 -j10 13 50Ω 9 100 12 +j100 10 250 11 +j250 -j250 S11 S22 180° -j25 -j100 -j50 +90° S21 S12 12 11 9 8 10 12 13 13 11 9 10 8 14GHz 14GHz SCALE FOR |S21| .02 .04 .06 .08 SCALE FOR |S12| .04 .08 1.2 1.6 0° -90° FREQUENCY S11 (MHZ) MAG ANG S-PARAMETERS VDS = 10V, IDS = 240mA S21 S12 MAG ANG MAG ANG S22 MAG ANG 500 1000 8000 8500 9000 9500 10000 10500 11000 11500 12000 12500 13000 13500 14000 .955 -100.1 .930 -137.3 .841 84.2 .820 72.6 .794 59.1 .766 44.2 .721 26.8 .681 8.7 .627 -11.9 .576 -34.7 .516 -62.3 .468 -94.0 .438 -127.9 .422 -161.2 .412 168.2 8.764 5.517 1.023 1.011 1.019 1.026 1.037 1.014 1.138 1.222 1.245 1.311 1.294 1.293 1.282 132.9 117.2 103.8 102.2 100.6 98.8 95.1 93.7 90.8 85.6 80.2 72.9 55.2 54.9 32.7 .023 50.0 .028 38.1 .026 90.8 .027 93.0 .029 92.2 .035 89.4 .039 88.6 .043 81.2 .044 81.0 .048 76.5 .050 74.0 .051 70.3 .053 64.2 .052 56.3 .051 42.8 .281 -52.4 .295 -75.4 .809 -171.9 .828 -176.1 .842 -179.9 .854 175.9 .867 170.8 .881 166.6 .862 161.3 .839 156.5 .841 149.9 .829 143.6 .816 136.5 .844 127.8 .863 114.2 3 FLX107MH-12 X, Ku Band Power GaAs FET Case Style "MH" Metal-Ceramic Hermetic Package 1.0 Min. (0.039) 2-Ø1.8±0.15 (0.071) 1 4 32 0.5 (0.020) 3.5±0.3 (0.138) 6.7±0.2 (0.264) 10.0±0.3 (0.394) 1.0 Min. (0.039) 3.5±0.15 (0.138) 0.1 (0.004) 2.8 Max. (0.110) 1.65±0.15 (0.065) 1. Gate 2. Source (Flange) 3. Drain 4. Source (Flange) Unit: mm(inches) 1.0 (0.039) 4 .


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