SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1186
DESCRIPTION
www.datasheet4u.com
·Wi...
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SD1186
DESCRIPTION
www.datasheet4u.com
·With TO-3 package ·High breakdown voltage ·High speed switching
APPLICATIONS ·Power switching applications
PINNING(see Fig.2) PIN DESCRIPTION
1 Base
2 Emitter
3 Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta= )
SYMBOL
PARAMETER
VCBO VCEO VEBO
IC ICM PC Tj Tstg
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25
VALUE 1500 800 6 5 7 50 150
-45~150
UNIT V V V A A W
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SD1186
CHARACTERISTICS
Tj=25 unless otherwise specified www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=7
VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A; IB=0.8A
ICES Collector cut-off current
VCE=1500V; RBE=0
IEBO Emitter cut-off current
VEB=6V; IC=0
hFE DC current gain
IC=0.3A ; VCE=5V
Switching times
tf Fall time ts Storage time
IC=4A ;IB1=0.8A; IB2=-2A
MIN TYP. MAX UNIT 6V
800 V 5.0 V 1.5 V 0.5 mA 0.1 mA
10 30
1.0 µs 1.0 µs
2
SavantIC Semiconductor
Silicon
NPN Power
Transistors
PACKAGE OUTLINE www.datasheet4u....