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JCS13N50FT Dataheets PDF



Part Number JCS13N50FT
Manufacturers JILIN SINO-MICROELECTRONICS
Logo JILIN SINO-MICROELECTRONICS
Description N-CHANNEL MOSFET
Datasheet JCS13N50FT DatasheetJCS13N50FT Datasheet (PDF)

N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 13 A 500 V 0.46Ω 37 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 25pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 25pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product Package ORDER MESSAGE Order codes JCS13N50FT-O-F-N-B Marking JCS13N50FT Package T.

  JCS13N50FT   JCS13N50FT


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N N- CHANNEL MOSFET R JCS13N50FT MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 13 A 500 V 0.46Ω 37 nC z z z UPS APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS z z Crss ( 25pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 25pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product Package ORDER MESSAGE Order codes JCS13N50FT-O-F-N-B Marking JCS13N50FT Package TO-220MF Halogen Free NO Packaging Tube Device Weight 2.20 g(typ) :201010B 1/8 R ABSOLUTE RATINGS (Tc=25℃) Parameter - Drain-Source Voltage Symbol VDSS Drain Current -continuous ID T=25℃ T=100℃ ( 1) Drain Current -pulse (note 1) IDM Gate-Source Voltage VGSS ( 2) Single Pulsed Avalanche Energy(note 2) EAS ( 1) Avalanche Current (note 1) IAR ( 1) Repetitive Avalanche Current (note 1) EAR ( 3) Peak Diode Recovery dv/dt (note 3) dv/dt Power Dissipation PD TC=25℃ -Derate above 25℃ Operating and Storage Temperature Range TJ,TSTG Maximum Lead Temperature for Soldering Purposes TL * *Drain current limited by maximum junction temperature JCS13N50FT Value 500 13.0* 8* 52* ±30 845 13.0 5.0 4.5 Unit V A A A V mJ A mJ V/ns 50 0.4 -55~+150 300 W W/℃ ℃ ℃ :201010B 2/8 R ELECTRICAL CHARACTERISTIC JCS13N50FT Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance Symbol Tests conditions Min Typ Max Units BVDSS ID=250μA, VGS=0V 500 - - V ΔBVDSS ID=250μA, referenced to /ΔTJ 25℃ - 0.6 - V/℃ IDSS IGSSF VDS=500V, VGS=0V, TC=25℃ VDS=400V, TC=125℃ VDS=0V, VGS =30V - - - 1 μA - 10 μA - 100 nA IGSSR VDS=0V, VGS =-30V - - -100 nA VGS(th) VDS = VGS , ID=250μA 3.0 - 5.0 V RDS(ON) VGS =10V , ID=6.5A - 0.37 0.46 Ω gfs VDS = 40V , ID=6.5A(note 4) - 15 - S Ciss Coss VDS=25V, VGS =0V, f=1.0MHZ - 1560 2090 pF - 210 260 pF Crss - 25 30 pF :201010B 3/8 R ELECTRICAL CHARACTERISTICS JCS13N50FT Parameter Symbol Tests conditions Min Typ Max Units Switching –Characteristics Turn-On delay time Turn-On rise time Turn-Off delay time td(on) tr td(off) VDD=250V,ID=13A,RG=25Ω (note 4,5) - 90 180 ns - 160 270 ns - 150 260 ns Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge tf Qg VDS =400V , Qgs ID=13A Qgd VGS =10V(note 4,5) - 60 140 ns - 37 50 nC - 10.9 - nC - 17.2 - nC - Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current IS - - 13 A Maximum Pulsed Drain-Source Diode Forward Current ISM - - 52 A Maximum Continuous Drain-Source VSD Diode Forward Current VGS=0V, IS=13A - 1.4 V Reverse recovery time Reverse recovery charge trr VGS=0V, IS=13A Qrr dIF/dt=100A/μs (note 4) 410 ns 4.5 μC THERMAL CHARACTERISTIC Parameter Symbol Value JCS13N50FT Unit Thermal Resistance, Junction to Case Rth(j-c) 2.50 ℃/W Thermal Resistance, Junction to Ambient Rth(j-A) 62.5 ℃/W 1: 2:L=9.0mH, IAS=13A, VDD=50V, RG=25 Ω, TJ=25℃ 3:ISD ≤13A,di/dt ≤200A/μs, VDD≤BVDSS, TJ=25℃ 4::≤300μs,≤2% 5: Notes: 1:Pulse width limited by maximum junction temperature 2:L=9.0mH, IAS=13A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤13A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2% 5:Essentially independent of operating temperature :201010B 4/8 ID Drain Current[A] DS(on)R Drain-Source On Resistance [Ω] R JCS13N50FT ELECTRICAL CHARACTERISTICS (curves) On-Region Characteristics Transfer Characteristics Vgs Top: 15.0V 10.0V 9.0V 8.0V 7.0V 101 6.5V Buttom : 5.5V 10 1 150℃ 25℃ ID Drain Current[A] 100 100 101 VDS Drain-Source Voltage[V] On-Resistance Variation vs Drain Current and Gate Voltage 0.6 VGS=10V Notes: 0.1 1.250μs pulse test 2.VDS=40V 2 4 6 8 10 VGS Gate-Source Voltage[V] Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 IDR Reverse Drain Current[A] 0.4 VGS=20V 0.2 0 5 10 15 20 ID Drain Current [A] Capacitance Characteristics V Gate Source Voltage[V] GS 1 150℃ 25℃ 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 VSD Source-Drain voltage[V] Capacitance Characteristics 12 VDS=100V 10 VDS=250V VDS=400V 8 6 4 2 0 0 10 20 30 40 Qg Toltal Gate Charge [nC] :201010B 5/8 R JCS13N50FT ELECTRICAL CHARACTERISTICS (curves) Breakdown Voltage Variation On-Resistance Variation vs. Temperature 1.2 vs. Temperature 3.0 2.5 1.1 2.0 R D(on)(Normalized) BVDS(Normalized) 1.0 1.5 0.9 Notes: 1. VGS=0V 2. ID=250μA 0.8 -75 -50 -25 0 25 50 75 100 125 150 Tj [℃] Maximum Safe Operating Area 102 Operation in This Area is Limited by RDS(ON) 1.


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