Document
N N- CHANNEL MOSFET
R
JCS13N50FT
MAIN CHARACTERISTICS
ID VDSS Rdson(@Vgs=10V) Qg
13 A 500 V 0.46Ω 37 nC
z z z UPS
APPLICATIONS
z High efficiency switch mode power supplies
z Electronic lamp ballasts based on half bridge
z UPS
z z Crss ( 25pF) z z z dv/dt zRoHS
FEATURES
zLow gate charge zLow Crss (typical 25pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
Package
ORDER MESSAGE
Order codes JCS13N50FT-O-F-N-B
Marking JCS13N50FT
Package TO-220MF
Halogen Free NO
Packaging Tube
Device Weight 2.20 g(typ)
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R
ABSOLUTE RATINGS (Tc=25℃)
Parameter - Drain-Source Voltage
Symbol VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1) Drain Current -pulse (note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
( 1) Avalanche Current (note 1)
IAR
( 1) Repetitive Avalanche Current (note 1)
EAR
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
Power Dissipation
PD TC=25℃ -Derate
above 25℃
Operating and Storage Temperature Range
TJ,TSTG
Maximum Lead Temperature for Soldering Purposes
TL
*
*Drain current limited by maximum junction temperature
JCS13N50FT
Value
500 13.0*
8* 52*
±30
845
13.0
5.0
4.5
Unit V A A A
V
mJ
A
mJ
V/ns
50 0.4 -55~+150 300
W W/℃
℃ ℃
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ELECTRICAL CHARACTERISTIC
JCS13N50FT
Parameter Off –Characteristics - Drain-Source Voltage Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-body leakage current, forward Gate-body leakage current, reverse On-Characteristics Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics Input capacitance Output capacitance Reverse transfer capacitance
Symbol
Tests conditions
Min Typ Max Units
BVDSS ID=250μA, VGS=0V
500 - - V
ΔBVDSS ID=250μA, referenced to /ΔTJ 25℃
- 0.6 - V/℃
IDSS IGSSF
VDS=500V, VGS=0V, TC=25℃ VDS=400V, TC=125℃
VDS=0V, VGS =30V
-
-
- 1 μA - 10 μA - 100 nA
IGSSR VDS=0V, VGS =-30V
- - -100 nA
VGS(th) VDS = VGS , ID=250μA
3.0 - 5.0 V
RDS(ON) VGS =10V , ID=6.5A
- 0.37 0.46 Ω
gfs
VDS = 40V , ID=6.5A(note 4) - 15 -
S
Ciss Coss
VDS=25V, VGS =0V, f=1.0MHZ
- 1560 2090 pF - 210 260 pF
Crss - 25 30 pF
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ELECTRICAL CHARACTERISTICS
JCS13N50FT
Parameter
Symbol
Tests conditions
Min Typ Max Units
Switching –Characteristics
Turn-On delay time Turn-On rise time Turn-Off delay time
td(on) tr td(off)
VDD=250V,ID=13A,RG=25Ω (note 4,5)
- 90 180 ns - 160 270 ns - 150 260 ns
Turn-Off Fall time Total Gate Charge - Gate-Source charge - Gate-Drain charge
tf
Qg VDS =400V , Qgs ID=13A Qgd VGS =10V(note 4,5)
- 60 140 ns - 37 50 nC - 10.9 - nC - 17.2 - nC
- Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current
IS - - 13 A
Maximum Pulsed Drain-Source Diode Forward Current
ISM
- - 52 A
Maximum Continuous Drain-Source VSD Diode Forward Current
VGS=0V, IS=13A
- 1.4 V
Reverse recovery time Reverse recovery charge
trr VGS=0V, IS=13A Qrr dIF/dt=100A/μs (note 4)
410 ns 4.5 μC
THERMAL CHARACTERISTIC
Parameter
Symbol
Value JCS13N50FT
Unit
Thermal Resistance, Junction to Case
Rth(j-c) 2.50 ℃/W
Thermal Resistance, Junction to Ambient
Rth(j-A)
62.5
℃/W
1: 2:L=9.0mH, IAS=13A, VDD=50V, RG=25 Ω,
TJ=25℃ 3:ISD ≤13A,di/dt ≤200A/μs, VDD≤BVDSS,
TJ=25℃ 4::≤300μs,≤2% 5:
Notes: 1:Pulse width limited by maximum junction temperature 2:L=9.0mH, IAS=13A, VDD=50V, RG=25 Ω,Starting TJ=25℃ 3:ISD ≤13A,di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ=25℃ 4:Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2% 5:Essentially independent of operating temperature
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ID Drain Current[A]
DS(on)R Drain-Source On Resistance [Ω]
R JCS13N50FT
ELECTRICAL CHARACTERISTICS (curves)
On-Region Characteristics
Transfer Characteristics
Vgs Top: 15.0V
10.0V 9.0V 8.0V 7.0V
101 6.5V Buttom : 5.5V
10
1 150℃
25℃
ID Drain Current[A]
100 100
101
VDS Drain-Source Voltage[V]
On-Resistance Variation vs Drain Current and Gate Voltage
0.6
VGS=10V
Notes: 0.1 1.250μs pulse test
2.VDS=40V
2 4 6 8 10
VGS Gate-Source Voltage[V]
Body Diode Forward Voltage Variation vs. Source Current and Temperature
10
IDR Reverse Drain Current[A]
0.4 VGS=20V
0.2 0 5 10 15 20
ID Drain Current [A]
Capacitance Characteristics
V Gate Source Voltage[V] GS
1
150℃ 25℃
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
VSD Source-Drain voltage[V]
Capacitance Characteristics
12
VDS=100V 10 VDS=250V
VDS=400V
8
6
4
2
0 0 10 20 30 40
Qg Toltal Gate Charge [nC]
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R JCS13N50FT
ELECTRICAL CHARACTERISTICS (curves)
Breakdown Voltage Variation
On-Resistance Variation
vs. Temperature
1.2
vs. Temperature
3.0
2.5
1.1 2.0
R D(on)(Normalized)
BVDS(Normalized)
1.0 1.5
0.9 Notes: 1. VGS=0V 2. ID=250μA
0.8 -75 -50 -25 0 25 50 75 100 125 150
Tj [℃]
Maximum Safe Operating Area
102 Operation in This Area is Limited by RDS(ON)
1.