Power MOSFET
www.vishay.com
IRLL110, SiHLL110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qg...
Description
www.vishay.com
IRLL110, SiHLL110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
100 VGS = 5.0 V
6.1 2.6 3.3 Single
0.54
D
SOT-223 D
S D G
Marking code: LB
G
S N-Channel MOSFET
FEATURES
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Repetitive avalanche rated
Logic-level gate drive
RDS(on) specified at VGS = 4 V and 5 V Fast switching
Available
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of greater than 1.25 W is possible in a typical surface mount application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free Lead (Pb)-free
SOT-223 Tube IRLL110PbF
SOT-223 Tape and Reel SiHLL110TR-GE3 IRLL110TRPbF a
Note a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain...
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