DATA SHEET
SILICON TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI ...
DATA SHEET
SILICON
TRANSISTOR
2SC4092
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR 4 PINS MINI MOLD
DESCRIPTION The 2SC4092 is an
NPN silicon epitaxial
transistor designed for low-
noise amplifier at VHF, UHF band. It is contained in 4 pins mini-mold package which enables high-isolation
gain.
PACKAGE DIMENSIONS (Units: mm)
+0.1 −0.05
+0.1 −0.05
2.8
+0.2 −0.3
1.5
+0.2 −0.1
0.4
0.4
3
2
(1.9)
2.9±0.2 (1.8)
0.85 0.95
FEATURES
NF = 1.5 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5 mA S21e2 = 12 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 20 mA
4
1
+0.1 −0.05
+0.1 −0.05
0.4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
25
Collector to Emitter Voltage VCEO
12
Emitter to Base Voltage
VEBO
3.0
Collector Current
IC 70
Total Power Dissipation
PT
200
Junction Temperature
Tj
150
Storage Temperature
Tstg −65 to +150
V V V mA mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE 40
Gain Bandwidth Product
fT
6
Output Capacitance Insertion Power Gain
Cob 0.55
S21e2
9.5
12
Noise Figure
NF 1.5
Maximum Available Gain
MAG
14.5
MAX. 0.1 0.1 200
0.9
3.0
0.6
5° 5°
+0.1 −0.06
1.1−+00..12 0.8
0.16
0 to 0.1
5° 5°
PIN CONNECTIONS 1. Collector 2. Emitter 3. Base 4. Emitter
UNIT µA µA
GHz pF dB dB dB
TEST CONDITIONS VCB = 15 V, IE = 0 VEB = 2.0 V, IC = 0 VCE = 10 V, IC = 20 mA VCE = 10...